Course Program Nanoelectronics EITP05/FYST39 2019

Lectures:     28 h           Lars-Erik Wernersson mfl

Laborations/exercises:                            54 h                                    

Stefan Andric/Gautham  Rangasamy

Formal requirements: EITP01 High-speed Devices or equivalent, ETIN70 Modern Electronics or equivalent

Examination: Laboration/project with written report, participation in lectures, and written exam (articles and handouts allowed)

Course book: Research articles

Week 12

Tu 20/3 10.15-12.00	E: 2311	F1 Introduction (LEW)
Fr  23/3 10.15-12.00	E: 2311	F2 Scaled Si CMOS  (LEW)

Week 13

Tu 27/3 10.15-12.00	E: 2311	F3 III-V CMOS I (LEW)
Th 29/3 15.15-17.00	E: 2311	F4 III-V CMOS II (LEW)

Week 16

Tu 17/4 10.15-12.00	E: 2311	F5 Power and delay (LEW)
Fr 20/4 10.15-12.00	E: 2311	F6 III-V TunnelFETs (LEW)

Week 17 

Tu  24/4 10.15-12.00	E: 2311	F7 Materials Integration I  (MB)
Fr  27/4 10.15-12.00	E: 2311	F8 Materials Integration II (LEW)

Introductory lab and project start.

 Week 18

Fr   4/5  10.15-12.00

E: 2311

F9 RRAM Neuromorphic comp. (KMP)

Week 19

Tu 8/5   10.15-12.00

E: 2311

F10 THz electronics/pulse-based syst.   (LO)

 

Project presentations.

Week 20

Tu 15/5 10.15-12.00	E: 2311	F 11 Carbon-based electronics I (JS)
Fr 18/5 10.15-12.00	E: 2311	F 12 Carbon-based electronics II(JS)

 

Week 21

Tu 22/5 10.15-12.00	E: 2311	F 13 Quantum Technologies (EL)
Fr 25/5 10.15-12.00	E: 2311	F 14  Circuits and Summary (LEW)

 

 Presentation of projects:     24/5-2019    (preliminary)

Written exam:                    7/6-2019      (14.00-19.00, MA8 )