Godkända
E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
Rungeng Xu ()
Start
2022-02-01
Presentation
2022-11-29 14:15
Plats:
E:2349
Avslutat:
2022-12-07
Examensrapport:
Sammanfattning
This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the singlepole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. The transistors used in this project are nanowire MOSFET transistors developed by the Division of Electromagnetics and Nanoelectronics, LTH, Lund University. A simple Class-F PA is designed in single stage common source topology and uses RF switch as output matching network. This project mainly investigates the behaviors of the RF switch, especially for the PA-path, and the performances of Class-F PA. In addition, this project explores the distributed RF switch as Class-F PA output matching network, in which the λ/4 transmission line can filter out even and odd harmonics.
Handledare: Lars Fhager (EIT) och Marcus Sandberg (EIT)
Examinator: Pietro Andreani (EIT)