Approved
III-V Nanowire MOSFETs for mm-Wave Switch Applications
Marcus Sandberg ()
Start
2020-06-08
Presentation
2020-12-03 10:15
Location:
LU Zoom Meeting: 68449840045
Finished:
2020-12-16
Master's thesis:
Abstract
Today's society is becoming increasingly digital, both in industry and ordinary households. As part of this, the need for fast and energy-efficient electronics that can communicate with each other without delay, so-called Internet of Things (IoT), is also growing. This can lead to great opportunities regarding increased efficiency for industry, households and infrastructure as it may lead to self-driving vehicles. For this to work, signals must be able to be sent between devices without delays and with a stable interconnection. Today this relates to 5G which enables sending of vast amounts of data with very low delay. Enabling this is the high frequencies used in 5G technology compared to 4G. In contrast to the digital electronics in, for example, a computer, analog applications use an oscillating signal. Simplified, it can be explained that the signal is within a frequency band and the higher this band is in frequency, the more information can be sent. An essential part of analog devices is the ability to choose what to do with the signal. For example, a signal captured by an antenna may need to be amplified while another needs to be filtered. ' To solve this, a Radio Frequency switch can be used. In this work, switches have been designed and simulated with nanowire-based transistors which, due to their geometric shape, have very good electrostatic properties. This means that they are very effective in leading and blocking signaling paths. While traditional planar transistors can, via a gate, affect the conductivity of the channel from one side, the nanowire transistors consisting of a thin wire has the ability to affect the channel from all directions. Furthermore, the wires consist of indium-gallium arsenide, a material that enables higher mobility of electrons, leading to higher speed and smaller losses. In addition to a standard switch design, two more application-specific designs have been developed, whose focus has been bandwidth and insulation ability. The results of the work show that switches designed with the nanowire transistor is comparable to state-of-the-art devices based on small losses, good bandwidth and good insulation ability.
Supervisor: Adam Jönsson (EIT) and Lars Fhager (EIT) and Stefan Andric (EIT)
Examiner: Erik Lind (EIT)