Announced
Transport Measurements on Vertical InAs/InGaAs Nanowire MOSFETs
Announced:
2017-09-20
Description
Transport Measurements on Vertical InAs/InGaAs Nanowire MOSFETs We are using vertical InAs/InGaAs nanowire MOSFETs to obtain high breakdown voltages suitable for amplifier applications. To understand the physics of the electrical characterisitcs and the breakdown mechanisms requires temperature dependent electrical characterisation. In this project you will use a probe station to perform DC measurements at variable temperatures and analyse the results. Suitable background: physics, nano or electronics // contact: lars-erik.wernersson@eit.lth.se
Contacts: Lars-Erik Wernersson (EIT)