Abstract:
|
E2SWITCH focuses on Tunnel FET (TFETs) as most promising energy efficient device candidates able to reduce the voltage supply of integrated circuits (ICs) below 0.25V and make them significantly more energy efficient by exploiting strained SiGe/Ge and III-V platforms, with CMOS technological compatibility. A full optimization and DC/AC benchmarking for complementary n- and p-type TFETs, integrated on the same fabrication platform, is proposed. Compact models are developed and implemented in Verilog A, for portability, to support the design of low power ICs with CMOS architectural compatibility for: (i) digital and (ii)
|