Projektfakta
InAs nanowire RF Devices – high frequency devices and dynamic materials characterization
2012-01-01 -> 2015-12-03
Sammanfattning: |
This project aims at investigating the high, or radio frequency (RF), dynamic properties of InAs FETs. We will utilize our previously developed RF-compatible InAs nanowire FET process and knowledge of vertical device layout to fabricate high-k MOSFETs with competitive performance. By scaling the electrodes widths, we aim to realize nanowire transistors operating above 100 GHz. This will shows that vertical nanowire transistors can potentially be a candidate for transistor scaling beyond Moore’s law. We will also investigate the time dependence of the physical processes involved in transport in narrow band gap, quasi 1D materials, such as band-to-band tunneling and impact ionization.
We will also investigate the high-frequency properties of the high-k / semiconductor interface, which will help us to optimize the structure for low Dit and low border trap density, needed for competitive device performance. This will be done both for nanowire transistors as well as the more simpler, planar geometry. |
Projektledare: | Erik Lind |
Deltagare: | Cezar Zota |
Finansiär: | Vetenskapsrådet (VR) |