Godkända
Integrerad antennswitch för NB-IoT
Fredrik Zetterblom (2012) och Yunus Dawji (2016)
Start
2018-01-01
Presentation
2018-06-14 10:15
Plats:
E:2349
Avslutat:
2018-06-14
Examensrapport:
Sammanfattning
The new NB-IoT (Narrow Band Internet Of Things) standard has recently been developed in order to connect a large number of devices. This standard will most probably also be implemented in the new 5G network, making it possible to have connected standalone devices. In the NB-IoT radio front-end there is an antenna switch to direct the RF signal either from the antenna to the receiver or from the power amplifier to the antenna. Integrating T/R (Transmit or Recieve) switch on-chip reduces cost by reducing the number of off-chip components which is a key for success of mass produced devices. The aim is to investigate and implement state-of-the-art integrated T/R switch with low insertion loss (less than 0.5 dB) and high isolation which can withstand signal level for all NB-IoT power classes (14, 20 and 23dBm), operating in the range 700 MHz to 1.8 GHz using a bulk CMOS process. If time permits we will also implement the T/R switch in SOI (silicon on insulator) technology as it is better for high power RF applications. The work will require us to look into co-design of T/R switch, LNA (Low Noise Amplifier) and PA (Power Amplifier). Based on the concept of circuit co-design, components are properly reused in order to minimize signal losses and chip area. The switch needs high isolation to reduce loss of power for transmitter efficiency and to protect the LNA input devices from the large voltage swings at the transmitter output. We also need to get deep understanding of device parasitics and perform careful layout.
Handledare: Johan Wernehag (ARM) och Magnus Nilsson (ARM) och Henrik Sjöland (EIT)
Examinator: Pietro Andreani (EIT)