Utlysta
Low Temperature Characterisation of InGaAs MOSFETs
Utlyst:
2017-09-20
Beskrivning
Low Temperature Characterisation of InGaAs MOSFETs Our InGaAs nanowire transistors have world record performance and operate close to the ballistic limit where carrier scattering in the channel becomes negligible and a wealth of interesting transport physics such as single subband quantized conductance start to appear. To clearly observe these effect requires low temperature characterisation. In this project you will use a cryogenic probe station to perform DC measurements on nanowire transistors and Hall bars down to 10 K and analyse the results. Suitable background: physics or nano // Contact: erik.lind@eit.lth.se
Kontaktpersoner: Lars-Erik Wernersson (EIT)