Utlysta
Simulations of Rapid Melt Growth of III-V Semiconductors
Utlyst:
2017-09-20
Beskrivning
Simulations of Rapid Melt Growth of III-V Semiconductors By rapid heating of a group III and group V materials deposited on a wafer it is possible to form a high quality crystal starting at a Si nucleation site. We aim to accurately control the composition of InGaAs formed during the heating process which requires detailed understanding of light absorption and thermal transport in the sample. In this project you will use the commercial finite element methosolverd Comsol to study e.g. the effects of sample geometry and heating process on the spatial temperature distribution. Suitable background: physics, nano or mechanical engineering // contact: mattias.borg@eit.lth.se
Kontaktpersoner: Mattias Borg (EIT)