Project(s)
Small Literature Project
For the literature project – you will pick a certain device type for the list and make a presentation (10-15 minutes, PowerPoint) on the lecture on the 18/12.
You need to cover the following for your topic:
- Why are the researchers/companies working on this device?
- Highlight the important device metrics (gm, fT, fmax, Ron, SS, NFmin, MSG…) which are relevant for your device.
- What makes this device type perform well or not so well in specific metrics?
For example: fmax for this device suffers because of … which is intrinsic to this type of device.
Work in groups of two and pick one of the following device types to investigate:
Device Type |
1. InGaAs/InP HEMT |
2. Si MOSFET FDSOI |
3. AlGaN/GaN HEMT |
4. In(Ga)As QW/Trigate MOSFET |
5. SiGe HBT |
6. Nanowire MOSFET |
7 Graphene and CNT FET |
Literature list for the topics:
1. InGaAs/InP HEMT
https://iopscience.iop.org/article/10.7567/1882-0786/ab1943/pdf
https://ieeexplore.ieee.org/document/7047678
https://ieeexplore.ieee.org/document/7747517
2. Si MOSFET FDSOI
https://ieeexplore.ieee.org/document/8429035
https://www.sciencedirect.com/science/article/pii/S0038110115003391?via%3Dihub
https://ieeexplore.ieee.org/document/8486903
3. AlGaN/GaN HEMT
https://digital-library.theiet.org/content/journals/10.1049/el.2018.0247
https://aip.scitation.org/doi/full/10.1063/1.5090528
https://ieeexplore.ieee.org/abstract/document/7086311
4. InGaAs QW/Trigate MOSFET
https://ieeexplore.ieee.org/document/8656532
https://ieeexplore.ieee.org/document/8287024?section=abstract
https://ieeexplore.ieee.org/abstract/document/8736749
5. SiGe HBT
https://ieeexplore.ieee.org/document/668665
https://iopscience.iop.org/article/10.1088/1361-6641/aade64
https://ieeexplore.ieee.org/abstract/document/7378277
6. Nanowire FET
https://ieeexplore.ieee.org/document/7494636
https://ieeexplore.ieee.org/document/7962575
https://link.springer.com/article/10.1007/s10825-019-01381-9
7. Graphene FET
https://www.nature.com/articles/nature09979
https://pubs.acs.org/doi/abs/10.1021/nl300904k
https://ieeexplore.ieee.org/abstract/document/6177217