Litteratur
M. Lundstrom & J. Guo 2006: Nanoscale Transistors - Device Physics, Modeling and Simulation
Available as e-book through the link above, free to download for students at LU. You can also order it as paperback, which can be convenient.
Excerpts and other documents
These are password protected (You got the password during F1 and F9). Contact Mattias if you have forgotten it).
Notes on Fermi-Dirac integrals
A very good additional source of information and theory about the Fermi-Dirac integral and it's use in semiconductor physics.
Comprehensive text covering what you need to know (and more) about noise in electronic devices and circuits.
Introduction to Transmission Lines
Text which covers the transmission line theory given in the course.
An introduction to two-port networks and gain in these networks. Pages 1-14 are relevant for F10-11, while chapter 3 about S-parameters are for F12.
A note on Mason's invariant (unilateral power gain)
A good background to why the definition of U looks the way it does.
Transistors for high frequencies
Most of this text have to do with the HBT device, that we do not cover explicitly in the course. Don't be discouraged, however, as the results of the HBT are mostly transferable to FETs. It is therefore still instructive to read about the HBT. The differences, similarities to the FET are covered at the end of the document.
Introduction to the Smith chart and basic operations on it.
An actual Smith chart to work with.
Collections of formulas covered in the course.