Publikationer

• Journal Articles (90)
• Conference Papers (Peer reviewed) (55)
• Conference Papers (2)
• Conference Abstracts (8)
• Dissertations (1)
• Popular Science Papers (1)

2013

1. P. Ramvall, C. H. Wang, G. Astromskas, G. Vellianitis, M. Holland, R. Droopad, L. Samuelson, L. E. Wernersson, M. Paslack, C. H. Diaz:
   MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
   Journal of Crystal Growth, Vol. 374, pp. 43-48, 2013. (BibTeX) (More info)
2. A. Dey, M. Borg, B. Ganjipour, M. Ek, K. Dick Thelander, E. Lind, C. Thelander, L. E. Wernersson:
   High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
   Electron Device Letters, Vol. 34, No. 2, pp. 211-213, 2013. (BibTeX) (More info)
3. I. Vakili, L. Ohlsson, M. Gustafsson, L. E. Wernersson:
   Wideband and Non-Dispersive Wavelet Transmission using Leaky Lens Antenna
   Electronics Letters, Vol. 49, No. 5, pp. 321-322, 2013. (BibTeX) (More info)
4. J. Svensson, N. Anttu, N. Vainorius, M. Borg, L. E. Wernersson:
   Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
   Nano letters, Vol. 13, No. 4, pp. 1380-1385, 2013. (BibTeX) (More info)

2012

5. M. Egard, L. Ohlsson, M. Ärlelid, K. M. Persson, M. Borg, F. Lenrick, R. Wallenberg, E. Lind, L. E. Wernersson:
   High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
   IEEE Electron Device Letters, Vol. 33, No. 3, pp. 369-371, 2012. (BibTeX) (More info)
6. G. Astromskas, M. Borg, L. E. Wernersson:
   Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
   Journal of Vaccum Science & Technology B, Vol. 30, No. 5, pp. 051202-, 2012. (BibTeX) (More info)
7. K. Jansson, E. Lind, L. E. Wernersson:
   Performance Evaluation of III?V Nanowire Transistors
   IEEE Transactions on Electron Devices, Vol. 59, No. 9, pp. 2375-2382, 2012. (BibTeX) (More info)
8. S. Gorji Ghalamestani, S. Johansson, M. Borg, E. Lind, K. Dick, L. E. Wernersson:
   Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
   Nanotechnology, Vol. 23, No. 1, pp. 015302-, 2012. (BibTeX) (More info)
9. B. Ganjipour, M. Ek, M. Borg, K. Dick, M. E. Pistol, L. E. Wernersson, C. Thelander:
   Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
   Applied Physics Letters, Vol. 101, No. 10, pp. 103501-, 2012. (BibTeX) (More info)
10. A. Dey, C. Thelander, E. Lind, K. Dick Thelander, M. Borg, M. Borgström, P. Nilsson, L. E. Wernersson:
    High-Performance InAs Nanowire MOSFETs
    Electron Device Letters, IEEE, Vol. 33, No. 6, pp. 791-793, 2012. (BibTeX) (More info)
11. M. Egard, M. Ärlelid, L. Ohlsson, M. Borg, E. Lind, L. E. Wernersson:
    In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
    IEEE Electron Device Letters, Vol. 33, No. 7, pp. 970-972, 2012. (BibTeX) (More info)
12. M. Borg, M. Ek, B. Ganjipour, A. Dey, K. Dick, L. E. Wernersson, C. Thelander:
    Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
    Applied Physics Letters, Vol. 101, No. 4, 2012. (BibTeX) (More info)
13. C. J. Delker, S. Kim, M. Borg, L. E. Wernersson, D. B. Janes:
    1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
    IEEE Transactions On Electron Devices, Vol. 59, No. 7, pp. 1980-1987, 2012. (BibTeX) (More info)
14. S. Gorji Ghalamestani, M. Heurlin, L. E. Wernersson, S. Lehmann, K. Dick:
    Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Nanotechnology, Vol. 23, No. 28, pp. 285601-, 2012. (BibTeX) (More info)
15. A. Dey, J. Svensson, M. Borg, M. Ek, L. E. Wernersson:
    Single InAs/GaSb Nanowire Low-Power CMOS Inverter
    Nano Letters, 2012. (BibTeX) (More info)

2011

16. M. Ärlelid, M. Egard, L. Ohlsson, E. Lind, L. E. Wernersson:
    Impulse-based 4 Gbit/s radio link at 60 GHz
    ELectronics Letters, Vol. 47, No. 7, pp. 467-U70, 2011. (BibTeX) (More info)
17. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
    Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
    IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 3, pp. 672-677, 2011. (BibTeX) (More info)
18. E. Lind, L. E. Wernersson:
    Design of RF Properties for Vertical Nanowire MOSFETs
    IEEE Transactions on Nanotechnology, Vol. 10, No. 4, pp. 668-673, 2011. (BibTeX) (More info)
19. B. Ganjipour, A. Dey, M. Borg, M. Ek, M. E. Pistol, K. Dick Thelander, L. E. Wernersson, C. Thelander:
    High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
    Nano Letters, Vol. 11, No. 10, pp. 4222-4226, 2011. (BibTeX) (More info)
20. M. Ek, M. Borg, A. Dey, B. Ganjipour, C. Thelander, L. E. Wernersson, K. Dick Thelander:
    Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
    Crystal Growth and Design, Vol. 11, No. 10, pp. 4588-4593, 2011. (BibTeX) (More info)
21. H. Nilsson, M. Deng, P. Caroff, C. Thelander, L. Samuelson, L. E. Wernersson, H. Xu:
    InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
    IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, No. 4, pp. 907-914, 2011. (BibTeX) (More info)
22. S. Gorji Ghalamestani, M. Berg, K. Dick, L. E. Wernersson:
    High quality InAs and GaSb thin layers grown on Si (111)
    Journal of Crystal Growth, Vol. 332, No. 1, pp. 12-16, 2011. (BibTeX) (More info)
23. H. Nilsson, P. Caroff, E. Lind, M. E. Pistol, C. Thelander, L. E. Wernersson:
    Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
    Journal of Applied Physics, Vol. 110, No. 6, 2011. (BibTeX) (More info)
24. S. Johansson, M. Egard, S. Gorji Ghalamestani, M. Borg, M. Berg, L. E. Wernersson, E. Lind:
    RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
    IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 10, pp. 2733-2738, 2011. (BibTeX) (More info)
25. R. Timm, M. Hjort, A. Fian, M. Borg, C. Thelander, J. N. Andersen, L. E. Wernersson, A. Mikkelsen:
    Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
    Applied Physics Letters, Vol. 99, No. 22, pp. 222907-1-222907-3, 2011. (BibTeX) (More info)
26. M. Borg, M. Ek, K. Dick Thelander, B. Ganjipour, A. Dey, C. Thelander, L. E. Wernersson:
    Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
    Applied Physics Letters, Vol. 99, pp. 203101-, 2011. (BibTeX) (More info)
27. B. Ganjipour, H. Nilsson, M. Borg, L. E. Wernersson, L. Samuelson, H. Xu, C. Thelander:
    GaSb nanowire single-hole transistor
    Applied Physics Letters, Vol. 99, No. 26, pp. 262104-, 2011. (BibTeX) (More info)
28. G. Astromskas, K. Storm, L. E. Wernersson:
    Transient studies on InAs/HfO2 nanowire capacitors
    Applied Physics Letters, Vol. 98, No. 1, pp. 013501-, 2011. (BibTeX) (More info)
29. B. Mandl, A. Dey, J. Stangl, M. Cantoro, L. E. Wernersson, G. Bauer, L. Samuelson, K. Deppert, C. Thelander:
    Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
    Journal of Crystal Growth, Vol. 334, No. 1, pp. 51-56, 2011. (BibTeX) (More info)
30. M. Borg, K. Dick Thelander, J. Eymery, L. E. Wernersson:
    Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
    Applied Physics Letters, Vol. 98, No. 11, pp. 113104-, 2011. (BibTeX) (More info)

2010

31. K. M. Persson, E. Lind, A. Dey, C. Thelander, H. Sjöland, L. E. Wernersson:
    Low-frequency noise in vertical InAs nanowire FETs
    IEEE ELECTRON DEVICE LETTERS, Vol. 31, No. 5, pp. 428-430, 2010. (BibTeX) (More info)
32. H. Nilsson, P. Caroff, C. Thelander, E. Lind, O. Karlström, L. E. Wernersson:
    Temperature dependent properties of InSb and InAs nanowire field-effect transistors
    Applied Physics Letters, Vol. 96, No. 15, 2010. (BibTeX) (More info)
33. M. Borg, K. Dick, B. Ganjipour, M. E. Pistol, L. E. Wernersson, C. Thelander:
    InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
    Nano letters, Vol. 10, No. Online August 24, 2010, pp. 4080-4085, 2010. (BibTeX) (More info)
34. M. Ärlelid, M. Egard, E. Lind, L. E. Wernersson:
    Coherent V-Band Pulse Generator for Impulse Radio BPSK
    Ieee Microwave and Wireless Components Letters, Vol. 20, No. 7, pp. 414-416, 2010. (BibTeX) (More info)
35. G. Astromskas, K. Storm, O. Karlström, P. Caroff, M. Borgström, L. E. Wernersson:
    Doping Incorporation in InAs nanowires characterized by capacitance measurements
    Journal of Applied Physics, Vol. 108, pp. 054306-, 2010. (BibTeX) (More info)
36. R. Timm, F. Alexander, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L. E. Wernersson, A. Mikkelsen:
    Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
    Applied Physics Letters, Vol. 97, pp. 132904-, 2010. (BibTeX) (More info)
37. C. Larsen, M. Ärlelid, E. Lind, L. E. Wernersson:
    Modelling and optimization of III/V transistors with matrices of nanowires
    Solid-State Electronics, Vol. 54, No. 12, pp. 1505-1510, 2010. (BibTeX) (More info)
38. M. Egard, S. Johansson, A. C. Johansson, K. M. Persson, A. Dey, M. Borg, C. Thelander, L. E. Wernersson, E. Lind:
    Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
    Nano letters, Vol. 10, No. 3, pp. 809-812, 2010. (BibTeX) (More info)
39. H. Nilsson, O. Karlström, M. Larsson, P. Caroff, J. Pedersen, L. Samuelson, A. Wacker, L. E. Wernersson, H. Xu:
    Correlation-induced conductance suppression at level degeneracy in a quantum dot.
    Physical Review Letters, Vol. 104, No. 18, pp. 186804-, 2010. (BibTeX) (More info)
40. E. Lind, Y. M. Niquet, H. Mera, L. E. Wernersson:
    Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
    Applied Physics Letters, Vol. 96, No. 23, pp. 233507-, 2010. (BibTeX) (More info)
41. V. Favre-Nicolin, F. Mastropietro, J. Eymery, D. Camacho, Y. M. Niquet, M. Borg, M. Messing, L. E. Wernersson, R. E. Algra, E. P. A. M. Bakkers, T. H. Metzger, R. Harder, I. K. Robinson:
    Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
    New Journal of Physics, Vol. 12, pp. 035013-, 2010. (BibTeX) (More info)
42. L. E. Wernersson, C. Thelander, E. Lind, L. Samuelson:
    III-V Nanowires-Extending a Narrowing Road
    Proceedings Of The IEEE, Vol. 98, No. 12, pp. 2047-2060, 2010. (BibTeX) (More info)

2009

43. S. Roddaro, P. Caroff, G. Biasiol, F. Rossi, C. Bocchi, K. Nilsson, L. Fröberg, J. B. Wagner, L. Samuelson, L. E. Wernersson, L. Sorba:
    Growth of vertical InAs nanowires on heterostructured substrates
    Nanotechnology, Vol. 20, No. 28, pp. 285303-, 2009. (BibTeX) (More info)
44. M. Egard, M. Ärlelid, E. Lind, G. Astromskas, L. E. Wernersson:
    20 GHz Wavelet Generator Using a Gated Tunnel Diode
    IEEE - Microwave and Wireless Letters, Vol. 19, No. 6, pp. 386-388, 2009. (BibTeX) (More info)
45. H. Nilsson, P. Caroff, C. Thelander, M. Larsson, J. Wagner, L. E. Wernersson, L. Samuelson, H. Xu:
    Giant, level-dependent g factors in InSb nanowire quantum dots.
    Nano letters, Vol. 9, No. 9, pp. 3151-3156, 2009. (BibTeX) (More info)
46. G. Astromskas, R. Wallenberg, L. E. Wernersson:
    Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
    Journal of Vacuum Science & Technology B, Vol. 27, No. 5, pp. 2222-2226, 2009. (BibTeX) (More info)
47. P. Caroff, M. Messing, M. Borg, K. Dick Thelander, K. Deppert, L. E. Wernersson:
    InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
    Nanotechnology, Vol. 20, No. 49, pp. 495606-, 2009. (BibTeX) (More info)
48. E. Lind, M. Persson, Y. M. Niquet, L. E. Wernersson:
    Band Structure Effects on the Scaling Properties of 111 InAs Nanowire MOSFETs
    IEEE Transactions on Electron Devices, Vol. 56, No. 2, pp. 201-205, 2009. (BibTeX) (More info)
49. L. E. Wernersson, M. Ärlelid, M. Egard, E. Lind:
    Gated tunnel diode in oscillator applications with high frequency tuning
    Solid-State Electronics, Vol. 53, No. 3, pp. 292-296, 2009. (BibTeX) (More info)

2008

50. P. Caroff, J. Wagner, K. Dick, H. Nilsson, M. Jeppsson, K. Deppert, L. Samuelson, R. Wallenberg, L. E. Wernersson:
    High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
    Small, Vol. 4, No. 7, pp. 878-882, 2008. (BibTeX) (More info)
51. C. Thelander, L. Fröberg, C. Rehnstedt, L. Samuelson, L. E. Wernersson:
    Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
    IEEE Electron Device Letters, Vol. 29, No. 3, pp. 206-208, 2008. (BibTeX) (More info)
52. C. Rehnstedt, C. Thelander, L. Fröberg, B. J. Ohlsson, L. Samuelson, L. E. Wernersson:
    Drive current and threshold voltage control in vertical InAs wrap-gate transistors
    Electronic Letters, Vol. 44, No. 3, pp. 236-237, 2008. (BibTeX) (More info)
53. L. Fröberg, C. Rehnstedt, C. Thelander, E. Lind, L. E. Wernersson, L. Samuelson:
    Heterostructure Barriers in Wrap Gated Nanowire FETs
    IEEE Electron Device Letters, Vol. 29, No. 9, pp. 981-983, 2008. (BibTeX) (More info)
54. C. Thelander, C. Rehnstedt, L. E. Froberg, E. Lind, T. Martensson, P. Caroff, T. Lowgren, B. J. Ohlsson, L. Samuelson, L. E. Wernersson:
    Development of a Vertical Wrap-Gated InAs FET
    IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 55, No. 11, pp. 3030-3036, 2008. (BibTeX) (More info)
55. C. Rehnstedt, T. Mårtensson, C. Thelander, L. Samuelson, L. E. Wernersson:
    Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
    IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 55, No. 11, pp. 3037-3041, 2008. (BibTeX) (More info)
56. M. Borg, K. Dick Thelander, J. Wagner, P. Caroff, K. Deppert, L. Samuelson, L. E. Wernersson:
    GaAs/GaSb nanowire heterostructures grown by MOVPE
    JOURNAL OF CRYSTAL GROWTH, Vol. 310, No. 18, pp. 4115-4121, 2008. (BibTeX) (More info)
57. S. Roddaro, K. Nilsson, G. Astromskas, L. Samuelson, L. E. Wernersson, O. Karlström, A. Wacker:
    InAs nanowire metal-oxide-semiconductor capacitors
    Applied Physics Letters, Vol. 92, No. 25, pp. 253509-, 2008. (BibTeX) (More info)
58. M. J. Kumar, M. A. Reed, G. A. J. Amaratunga, G. M. Cohen, D. B. Janes, C. M. Lieber, M. Meyyappan, L. E. Wernersson, K. L. Wang, R. S. Chau, T. I. Kamins, M. Lundstrom, B. Yu, C. Zhou:
    Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
    IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 55, No. 11, pp. 2813-2819, 2008. (BibTeX) (More info)
59. M. J. Kumar, M. A. Reed, G. A. J. Amaratunga, G. M. Cohen, D. B. Janes, C. M. Lieber, M. Meyyappan, L. E. Wernersson, K. L. Wang, R. S. Chau, T. I. Kamins, M. Lundstrom, B. Yu, C. Zhou:
    Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
    IEEE Transactions On Nanotechnology, Vol. 7, No. 6, pp. 643-650, 2008. (BibTeX) (More info)
60. O. Karlström, A. Wacker, K. Nilsson, G. Astromskas, S. Roddaro, L. Samuelson, L. E. Wernersson:
    Analysing the capacitance?voltage measurements of vertical wrapped-gated nanowires
    Nanotechnology, Vol. 19, No. 43, pp. 435201-, 2008. (BibTeX) (More info)

2007

61. L. E. Wernersson, E. Lind, L. Samuelson, T. Lowgren, J. Ohlsson:
    Nanowire field-effect transistor
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol. 46, No. 4B, pp. 2629-2631, 2007. (BibTeX) (More info)

2006

62. E. Lind, A. Persson, L. Samuelson, L. E. Wernersson:
    Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
    Nano Letters, Vol. 6, No. 9, pp. 1842-1846, 2006. (BibTeX) (More info)
63. T. Bryllert, L. E. Wernersson, T. Lowgren, L. Samuelson:
    Vertical wrap-gated nanowire transistors
    Nanotechnology, Vol. 17, No. 11, pp. S227-S230, 2006. (BibTeX) (More info)
64. T. Bryllert, L. E. Wernersson, L. Fröberg, L. Samuelson:
    Vertical high-mobility wrap-gated InAs nanowire transistor
    IEEE Electron Device Letters, Vol. 27, No. 5, pp. 323-325, 2006. (BibTeX) (More info)

2005

65. L. E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. H. Kosel, A. Seabaugh:
    A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
    IEEE transactions on nanotechnology, Vol. 4, No. 5, pp. 594-598, 2005. (BibTeX) (More info)
66. L. E. Wernersson, E. Lind, J. Lembke, B. Martinsson, W. Seifert:
    InAs epitaxial lateral overgrowth of W masks
    JOURNAL OF CRYSTAL GROWTH, Vol. 280, No. 1-2, pp. 81-86, 2005. (BibTeX) (More info)

2004

67. L. E. Wernersson, P. Lindström, A. Nauen, E. Lind:
    Nanoelectronic pulse generators based on gated resonant tunnelling diodes
    International Journal of Circuit Theory and Applications, Vol. 32, No. 5, pp. 431-437, 2004. (BibTeX) (More info)
68. E. Lind, P. Lindström, L. E. Wernersson:
    Resonant tunneling permeable base transistors with high transconductance
    IEEE Electron Device Letters, Vol. 25, No. 10, pp. 678-680, 2004. (BibTeX) (More info)
69. L. E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, A. Seabaugh:
    SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
    Electronics Letters, Vol. 40, No. 1, pp. 83-85, 2004. (BibTeX) (More info)

2003

70. Y. Miyamoto, R. Yamamoto, H. Maeda, K. Takeuchi, N. Machida, L. E. Wernersson, K. Furuya:
    InP hot electron transistors with a buried metal gate
    Japanese Journal of Applied Physics - Part 1: Regular papers, Short notes and Review papers, Vol. 42, No. 12, pp. 7221-7226, 2003. (BibTeX) (More info)
71. T. Bryllert, M. Borgström, L. E. Wernersson, W. Seifert, L. Samuelson:
    Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
    Applied Physics Letters, Vol. 82, No. 16, pp. 2655-2657, 2003. (BibTeX) (More info)
72. L. E. Wernersson, E. Lind, P. Lindström, P. Andreani:
    Highly functional tunnelling devices integrated in 3D
    International Journal of Circuit Theory and Applications, Vol. 31, No. 1, pp. 105-117, 2003. (BibTeX) (More info)
73. M. Borgström, T. Bryllert, T. Sass, L. E. Wernersson, L. Samuelson, W. Seifert:
    Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
    Journal of Crystal Growth, Vol. 248, pp. 310-316, 2003. (BibTeX) (More info)
74. T. Sass, I. Pietzonka, M. Borgström, B. Gustafson, L. E. Wernersson, W. Seifert:
    Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
    Journal of Crystal Growth, Vol. 248, pp. 375-379, 2003. (BibTeX) (More info)
75. E. Lind, B. Gustafson, I. Pietzonka, L. E. Wernersson:
    Tunneling spectroscopy of a quantum dot through a single impurity
    Physical Review B, Vol. 68, No. 3, pp. 4-4, 2003. (BibTeX) (More info)

2002

76. L. E. Wernersson, R. Yamamoto, Y. Miyamoto, E. Lind, I. Pietzonka, W. Seifert, L. Samuelson, K. Furuya:
    Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
    COMPOUND SEMICONDUCTORS 2001, Vol. 170, pp. 81-85, 2002. (BibTeX) (More info)
77. M. Achermann, U. Siegner, L. E. Wernersson, U. Keller:
    Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13, No. 2-4, pp. 819-822, 2002. (BibTeX) (More info)
78. E. Lind, I. Pietzonka, P. Lindström, W. Seifert, L. E. Wernersson:
    Three-dimensional integrated resonant tunneling transistor with multiple peaks
    Applied Physics Letters, Vol. 81, No. 10, pp. 1905-1907, 2002. (BibTeX) (More info)
79. S. Lee, C. Zetterling, M. Ostling, I. Åberg, M. Magnusson, K. Deppert, L. E. Wernersson, L. Samuelson, A. Litwin:
    Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
    Solid-State Electronics, Vol. 46, No. 9, pp. 1433-1440, 2002. (BibTeX) (More info)
80. S. Lee, C. Zetterling, M. Ostling, I. Aberg, M. Magnusson, K. Deppert, L. E. Wernersson, L. Samuelson, A. Litwin:
    Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, Vol. 389-3, No. 2, pp. 937-940, 2002. (BibTeX) (More info)
81. L. E. Wernersson, B. Gustafson, A. Gustafsson, M. Borgström, I. Pietzonka, T. Sass, W. Seifert, L. Samuelson:
    Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
    Applied Surface Science, Vol. 190, No. 1, pp. 252-257, 2002. (BibTeX) (More info)
82. S. Ohki, H. Funato, M. Suhara, T. Okumura, L. E. Wernersson, W. Seifert:
    A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
    Applied Surface Science, Vol. 190, No. 1-4, pp. 288-293, 2002. (BibTeX) (More info)
83. M. Achermann, U. Siegner, L. E. Wernersson, U. Keller:
    Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
    Applied Surface Science, Vol. 190, No. 1-4, pp. 513-516, 2002. (BibTeX) (More info)
84. E. Lind, L. E. Wernersson, I. Pietzonka, W. Seifert:
    Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
    IEEE Transactions on Electron Devices, Vol. 49, No. 6, pp. 1066-1069, 2002. (BibTeX) (More info)
85. T. Bryllert, M. Borgström, T. Sass, B. Gustafson, L. Landin, L. E. Wernersson, W. Seifert, L. Samuelson:
    Designed emitter states in resonant tunneling through quantum dots
    APPLIED PHYSICS LETTERS, Vol. 80, No. 15, pp. 2681-2683, 2002. (BibTeX) (More info)
86. I. Aberg, K. Deppert, M. Magnusson, I. Pietzonka, W. Seifert, L. E. Wernersson, L. Samuelson:
    Nanoscale tungsten aerosol particles embedded in GaAs
    Applied Physics Letters, Vol. 80, No. 16, pp. 2976-2978, 2002. (BibTeX) (More info)
87. L. E. Wernersson, M. Borgström, B. Gustafson, A. Gustafsson, I. Pietzonka, M. E. Pistol, T. Sass, W. Seifert, L. Samuelson:
    Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
    Applied Physics Letters, Vol. 80, No. 10, pp. 1841-1843, 2002. (BibTeX) (More info)
88. M. Achermann, F. Morier-Genoud, W. Seifert, L. E. Wernersson, U. Siegner, U. Keller:
    Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
    Physical Review B, Vol. 65, No. 4, pp. 045322-, 2002. (BibTeX) (More info)
89. B. Gustafson, D. Csontos, M. Suhara, L. E. Wernersson, W. Seifert, H. Xu, L. Samuelson:
    Coupling between lateral modes in a vertical resonant tunneling structure
    Physica E, Vol. 13, No. 2-4, pp. 950-953, 2002. (BibTeX) (More info)
90. L. E. Wernersson, K. Georgsson, A. Gustafsson, A. Löfgren, L. Montelius, N. Nilsson, H. Pettersson, W. Seifert, L. Samuelson, J. O. Malm:
    Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 2, pp. 580-589, 2002. (BibTeX) (More info)

2012

1. A. Dey, M. Borg, B. Ganjipour, M. Ek, K. Dick Thelander, E. Lind, P. Nilsson, C. Thelander, L. E. Wernersson:
   High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
   Device research conference, 70th Annual Device Research Conference (DRC), University Park, TX, pp. 205-206, 20120618. (BibTeX) (More info)
2. S. Johansson, S. Gorji Ghalamestani, M. Egard, M. Borg, M. Berg, L. E. Wernersson, E. Lind:
   High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
   physica status solidi (c), 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week, Berlin, Germany, Vol. 9, No. 2, pp. 350-353, May 22-26, 2011. (BibTeX) (More info)
3. S. Gorji Ghalamestani, S. Johansson, M. Borg, K. Dick, L. E. Wernersson:
   Highly controlled InAs nanowires on Si(111) wafers by MOVPE
   physica status solidi (c), 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week, Berlin, Germany, Vol. 9, No. 2, May 22-26, 2011. (BibTeX) (More info)
4. A. Dey, C. Thelander, E. Lind, M. Borgström, M. Borg, P. Nilsson, L. E. Wernersson:
   High-performance 15 nm diameter InAs nanowire ?-gate MOSFETs
   GigaHertz 2012, Stockholm, Sweden, 2012-03-06. (BibTeX) (More info)

2011

5. G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L. E. Wernersson:
   Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
   Microelectronic Engineering, EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials, Strasbourg, France, Vol. 88, No. 4, pp. 444-447, Jun 07-11, 2010. (BibTeX) (More info)
6. R. Timm, M. Hjort, A. Fian, C. Thelander, E. Lind, J. N. Andersen, L. E. Wernersson, A. Mikkelsen:
   Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
   Microelectronic Engineering, 17th Conference on "Insulating Films on Semiconductors", Grenoble, France, Vol. 88, pp. 1091-1094, 2011 June 21-24. (BibTeX) (More info)
7. S. Johansson, S. Gorji Ghalamestani, M. Borg, E. Lind, L. E. Wernersson:
   Temperature and annealing effects on InAs nanowire MOSFETs
   Microelectronic Engineering, 17th International Conference on Insultating Films on Semiconductors, Grenoble, France, Vol. 88, No. 7, pp. 1105-1108, June 21-24, 2011. (BibTeX) (More info)
8. A. Dey, C. Thelander, M. Borgström, M. Borg, E. Lind, L. E. Wernersson:
   15 nm diameter InAs nanowire MOSFETs
   Device Research Conference (DRC), 2011 69th Annual, Santa Barbara, CA, USA, pp. 21-22, 2011-06-20. (BibTeX) (More info)
9. M. Ärlelid, L. Ohlsson, M. Egard, E. Lind, L. E. Wernersson:
   60 GHz impulse radio measurements
   2011 IEEE International Conference on Ultra-Wideband (ICUWB), Bologna, Italy, pp. 536-540, Sep 14-16, 2011. (BibTeX) (More info)
10. M. Egard, L. Ohlsson, M. Borg, F. Lenrick, R. Wallenberg, L. E. Wernersson, E. Lind:
    High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
    2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, DEC 05-07, 2011. (BibTeX) (More info)

2010

11. A. Dey, M. Egard, S. Johansson, A. C. Johansson, K. M. Persson, M. Borg, C. Thelander, P. Nilsson, H. Sjöland, E. Lind, L. E. Wernersson:
    Vertical InAs nanowire wrap gate transistors for integration on a Si platform
    2010 GigaHertz Symposium, Lund, 2010-03-09/2010-03-10. (BibTeX) (More info)
12. E. Lind, M. Egard, S. Johansson, A. C. Johansson, M. Borg, C. Thelander, K. M. Persson, A. Dey, L. E. Wernersson:
    High Frequency Performance of Vertical InAs Nanowire MOSFET
    2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm), 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, JAPAN, MAY 31-JUN 04, 2010. (BibTeX) (More info)
13. M. Ärlelid, L. E. Wernersson, M. Egard, E. Lind:
    A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
    2010 IEEE International Conference on Ultra-Wideband (ICUWB), Nanjing, China, pp. 102-105, 2010-09-20. (BibTeX) (More info)
14. M. Borg, K. Dick Thelander, P. Caroff, B. Ganjipour, C. Thelander, L. E. Wernersson:
    InAs/GaSb heterostructure nanowires for tunnel FETs
    15th international conference on metal organic vapor phase epitaxy, Lake Tahoe, USA, 2010. (BibTeX) (More info)
15. E. Lind, L. E. Wernersson, R. Timm, M. Hjort, A. Mikkelsen, Y. M. Niquet:
    High-k oxides on (100), (111)A and (111)B InAs substrates
    EMRS spring meeting, Strasbourg, France, 2010. (BibTeX) (More info)
16. G. Astromskas, K. Storm, L. E. Wernersson:
    Analysis of InAs/HfO2 nanowire CV characteristics
    EMRS spring meeting, Strasbourg, France, 2010. (BibTeX) (More info)
17. L. Ohlsson, D. Sjöberg, M. Ärlelid, M. Egard, E. Lind, L. E. Wernersson:
    Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
    2010 Loughborough Antennas & Propagation Conference, Loughborough, UK, pp. 253-256, 2010-11-08/2010-11-09. (BibTeX) (More info)
18. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
    Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
    Device Research Conference (DRC), 2010, Notre Dame, US, pp. 161-162, 2010-06-20. (BibTeX) (More info)
19. L. E. Wernersson, M. Egard, M. Ärlelid, E. Lind:
    Tunneling-based devices and circuits
    2010 IEEE International Conference on IC Design and Technology (ICICDT), MINATEC, Grenoble, France, pp. 190-193, 2010-06-04. (BibTeX) (More info)

2009

20. M. Egard, M. Ärlelid, E. Lind, G. Astromskas, L. E. Wernersson:
    20 GHz gated tunnel diode based UWB pulse generator
    Physica Status Solidi C: Current Topics In Solid State Physics, Vol 6, No 6, 35th International Symposium on Compound Semiconductors, Rust, Germany, Vol. 6, No. 6, pp. 1399-1402, Sep 21-24, 2008. (BibTeX) (More info)
21. M. Borg, M. Messing, P. Caroff, K. Dick Thelander, K. Deppert, L. E. Wernersson:
    MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
    2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM), 21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, United States, pp. 249-252, May 10-14, 2009. (BibTeX) (More info)
22. M. Egard, M. Ärlelid, E. Lind, P. Caroff, G. Astromskas, M. Borg, L. E. Wernersson:
    60 GHz Wavelet Generator for Impulse Radio Applications
    European Microwave Conference, 2009. EuMC 2009, 37th European Microwave Conference, Rome, Italy, pp. 1908-1911, September 29-October 01, 2009. (BibTeX) (More info)
23. M. Ärlelid, L. E. Wernersson, M. Egard, E. Lind:
    60 GHz Ultra-Wideband Impulse Radio Transmitter
    IEEE International Conference on Ultra-Wideband, 2009. ICUWB 2009, 9th IEEE International Conference on Ultra-Wideband, Vancouver, Canada, pp. 185-188, SEP 09-11, 2009. (BibTeX) (More info)
24. D. Wheeler, L. E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K. J. Weststrate, A. Sonnet, E. M. Vogel, A. Seabaugh:
    Deposition of HfO2 on InAs by atomic-layer deposition
    Microelectronic Engineering, 16th Biennial Conference on Insulating Films on Semiconductors, Cambridge, England, Vol. 86, No. 7-9, pp. 1561-1563, Jun 28-Jul 07, 2009. (BibTeX) (More info)
25. D. Sjöberg, M. Egard, M. Ärlelid, G. P. Vescovi, L. E. Wernersson:
    Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
    European Conference on Antennas and Propagation, Berlin, Germany, pp. 3429-3433, 2009-03-23. (BibTeX) (More info)

2008

26. P. Caroff, M. Jeppsson, D. Wheeler, M. Keplinger, B. Mandl, J. Stangl, A. Seabaugh, G. Bauer, L. E. Wernersson:
    InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
    Journal of Physics: Conference Series, 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, Sweden, Vol. 100, pp. 042017-, July 02-06, 2007. (BibTeX) (More info)
27. M. Jeppsson, K. Dick, H. Nilsson, N. Sköld, J. Wagner, P. Caroff, L. E. Wernersson:
    Characterization of GaSb nanowires grown by MOVPE
    Journal of Chrystal Growth, 14th International Conference on Metal Organic Vapor Phase Epitaxy, Metz, FRANCE, Vol. 310, No. 23, pp. 5119-5122, JUN 01-06, 2008. (BibTeX) (More info)
28. L. E. Wernersson:
    III/V Nanowire FETs for CMOS?
    Sige, Ge, And Related Compounds 3: Materials, Processing, And Devices, 3rd International SiGe, Ge, and Related Compounds Symposium, Honolulu, HI, USA, Vol. 16, No. 10, pp. 741-743, Oct 12-17, 2008. (BibTeX) (More info)
29. G. Astromskas, L. E. Wernersson:
    Heterogeneous integration of InAs on W/GaAs by MOVPE
    Journal of Physics: Conference Series, 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, Sweden, Vol. 100, pp. 042043-, July 02-06, 2007. (BibTeX) (More info)

2007

30. L. E. Wernersson:
    InAs WRAP-gate nanowire transistors
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, pp. 527-529, May 14-18 2007. (BibTeX) (More info)
31. L. E. Wernersson:
    High-performance InAs NW MISFETs
    Book of abstracts: 8th Sweden-Japan Intl Workshop on Quantum Nanoelectronics, Lund, Sweden (2007), invited, 2007. (BibTeX) (More info)
32. L. E. Wernersson:
    Electron microscopy studies of nanowires
    Book of abstracts: Aminoff Symp: Carbon nanotubes - with an eye on the nanoworld, Stockholm, Sweden (2007), invited, 2007. (BibTeX) (More info)

2006

33. E. Lind, L. E. Wernersson:
    InAsP/InAs nanowire heterostructure field effect transistors
    Device Research Conference, University Park, PA, USA, pp. 173-174, 26-28 June 2006. (BibTeX) (More info)
34. T. Bryllert, L. E. Wernersson, L. Fröberg, L. Samuelson:
    Vertical high mobility wrap-gated InAs nanowire transistors
    IEEE Electron Dev Lett 27, 323-325 (2006), 63rd Annual Device Res Conf, Santa Barbara, Ca, USA (2005), 2006. (BibTeX) (More info)
35. L. E. Wernersson:
    Nanowire field effect transistor
    Book of abstracts: Intl Conf on Solid State Devices and Materials, Kanagawa, Japan (2006), invited, 2006. (BibTeX) (More info)
36. L. E. Wernersson:
    Nanowire transistors: fabrication, performance and applications
    Book of abstracts: Intl Workshop Challenges and Opportunities in Nanoarchitectures, Halmstad, Sweden (2006), invited, 2006. (BibTeX) (More info)
37. L. E. Wernersson:
    InAs wrap-gate FETs
    Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006), 2006. (BibTeX) (More info)
38. L. Fröberg, T. Löwgren, C. Thelander, E. Lind, T. Bryllert, P. Svensson, J. Ohlsson, L. Samuelson, L. E. Wernersson:
    Vertical InAs nanowire wrap-gate FETs
    Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006), 2006. (BibTeX) (More info)

2005

39. T. Bryllert, L. Samuelson, L. Jensen, L. E. Wernersson:
    Vertical high mobility wrap-gated InAs nanowire transistor
    Device Research Conference, Santa Barbara, CA, USA, 20-22 June 2005. (BibTeX) (More info)
40. L. E. Wernersson, T. Bryllert, E. Lind, L. Samuelson:
    Wrap-gated InAs nanowire field-effect transistor
    International Electron Devices Meeting 2005, Washington, DC, USA, pp. 273-276, 5-7 Dec. 2005. (BibTeX) (More info)
41. L. E. Wernersson:
    Gated tunnel diodes in nanoelectronic pulse generators
    Book of abstracts: Sweden-Japan Intl Workshop on Quantum Nano-Physics and Electronics, Kyoto, Japan (2005), 2005. (BibTeX) (More info)
42. L. E. Wernersson, E. Lind, W. Seifert:
    MOVPE of InAs epitaxial overgrowth of W masks
    Book of abstracts: 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005), 2005. (BibTeX) (More info)
43. L. E. Wernersson, T. Bryllert, E. Lind, L. Samuelson:
    Wrap-gated InAs nanowire field effect transistor
    Technical digest: IEEE Intl Electron Dev Meet 273-276 (2005), IEEE Intl Electron Dev Meet, Washington, DC (2005), invited, 2005. (BibTeX) (More info)

2004

44. P. Lindström, E. Lind, L. E. Wernersson:
    Design of resonant tunneling permeable base transistors
    2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767), San Diego, CA, USA, pp. 158-163, 25-27 Aug. 2003. (BibTeX) (More info)
45. E. Lind, P. Lindström, A. Nauen, L. E. Wernersson:
    Resonant tunneling permeable base transistor based pulsed oscillator
    Device Research Conference - Conference Digest, DRC, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, pp. 129-130, Jun 21-23 2004. (BibTeX) (More info)
46. L. E. Wernersson:
    3D metal-semiconductor devices and other nanoelectronic devices
    NSF/SSF Workshop on Nanoscience and Nanotechnology, Lund, Sweden (2004), 2004. (BibTeX) (More info)
47. E. Lind, P. Lindström, A. Nauen, L. E. Wernersson:
    Resonant tunneling permeable base transistor based pulsed oscillator
    Book of abstracts: Intl Semicond Dev Res Symp, (2004), 2004. (BibTeX) (More info)
48. L. E. Wernersson:
    Nanoelectronic pulse generators for UWB applications
    Book of abstracts:, 1st Sweden-Korea Nano-Workshop, Seoul, Korea (2004), invvited, 2004. (BibTeX) (More info)

2003

49. E. Lind, P. Lindström, L. E. Wernersson:
    Resonant Tunneling Permeable Base Transistor for RF applications
    2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741), Washington, DC, USA, pp. 487-488, 10-12 Dec. 2003. (BibTeX) (More info)

2002

50. M. Suhara, S. Ooki, L. E. Wernersson, W. Seifert, L. Samuelson, T. Okumura:
    A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
    Compound Semiconductors 2001 (Institute of Physics Conference Series), ISCS 2001, Tokyo, Japan, No. 170, pp. 363-367, October 1-4, 2001. (BibTeX) (More info)
51. M. Borgström, T. Bryllert, T. Sass, L. E. Wernersson, L. Samuelson, W. Seifert:
    Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
    Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 24-28 June 2002. (BibTeX) (More info)
52. T. Bryllert, M. Borgström, T. Sass, B. Gustafson, L. Landin, L. E. Wernersson, W. Seifert, L. Samuelson:
    Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
    Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 24-28 June 2002. (BibTeX) (More info)
53. E. Lind, P. Lindström, I. Pietzonka, W. Seifert, L. E. Wernersson:
    Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
    Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 24-28 June 2002. (BibTeX) (More info)
54. E. Lind, P. Lindström, I. Pietzonka, W. Seifert, L. E. Wernersson:
    A resonant tunneling permeable base transistor with Al-free tunneling barriers
    Device Research Conference (Cat. No.02TH8606), Santa Barbara, CA, USA, pp. 155-156, 24-26 June 2002. (BibTeX) (More info)
55. L. E. Wernersson, E. Lind, P. Lindström, P. Andreani:
    Circuits and devices with integrated VFETs and RTDs
    2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353), Phoenix-Scottsdale, AZ, USA, pp. 205-208, 26-29 May 2002. (BibTeX) (More info)

1. A. Dey, M. Berg, M. Borg, S. Gorji Ghalamestani, K. Jansson, S. Johansson, E. Lind, K. M. Persson, C. Thelander, M. Ärlelid, P. Nilsson, L. E. Wernersson:
   Inverter circuits based on vertical InAs nanowire MOSFETs
   SSoCC 2011, Varberg, Sweden, 2011-05-02. (BibTeX) (More info)
2. M. Ärlelid, E. Lind, M. Nilsson, L. E. Wernersson:
   Pulse Generator with Gated Tunnel Diode
   Proceedings of Swedish System-on-Chip Conference (SSoCC), Fiskebäckskil, 2007-05-14/2007-05-15. (BibTeX) (More info)

1. M. Borg, M. Ek, B. Ganjipour, A. Dey, K. Dick Thelander, L. E. Wernersson, C. Thelander:
   Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
   MRS Fall Meeting 2012, Boston, MA, 2012-11-25. (BibTeX) (More info)
2. B. Ganjipour, M. Borg, M. Ek, K. Dick Thelander, M. E. Pistol, L. E. Wernersson, C. Thelander:
   Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
   ICPS 2012, Zürich, 2012. (BibTeX) (More info)
3. M. Borg, A. Dey, B. Ganjipour, M. Ek, K. Dick Thelander, C. Thelander, L. E. Wernersson:
   Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
   ICPS 2012, Zürich, 2012. (BibTeX) (More info)
4. M. Ärlelid, M. Egard, E. Lind, L. E. Wernersson:
   Oscillator for 60 GHz Super Regenerative Receiver
   GigaHertz Symposium 2010, Lund, Sweden, pp. 51-51, 2010-03-09. (BibTeX) (More info)
5. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
   A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
   34th International European Workshop on Compound Semiconductor Devices and Integrated Circuits, Darmstadt/Seeheim, Germany, 2010-05-17. (BibTeX) (More info)
6. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
   60 GHz Wavelet Generator for Impulse Radio Applications
   GigaHertz Symposium 2010, Lund, Sweden, pp. 52-52, 2010-03-09. (BibTeX) (More info)
7. M. Nilsson, M. Ärlelid, E. Lind, G. Astromskas, L. E. Wernersson:
   Gated tunnel diode pulse generator
   Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology, GigaHertz Symposium, Göteborg, Sweden, No. nrMC2-125, pp. 37-37, 2008-03-05. (BibTeX) (More info)
8. M. Ärlelid, M. Nilsson, G. Astromskas, E. Lind, L. E. Wernersson:
   High Tuning-Range VCO Using a Gated Tunnel Diode
   2007 International Conference on Solid State Materials and Devices, Tsukuba, Japan, pp. 798-799, 2007-09-18/2007-09-21. (BibTeX) (More info)

1. L. E. Wernersson:
   Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
   ISBN 91-628-3002-3, Lars-Erik Wernersson Norbergsg. 3 223 54 Lund,, 1998. (BibTeX) (More info)

1. J. Wu, E. Lind, R. Timm, M. Hjort, A. Mikkelsen, L. E. Wernersson:
   Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
   Applied Physics letter, Vol. 100, No. 13, pp. 132905-132905-3, 2012. (BibTeX) (More info)