Abstract:
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The Nanoelectronics project is based on a new intradepartmental group in Lund that addresses issues in materials science (e.g. small band gap materials), device physics (design and realization of nanowire III/V MOS devices) and circuit design (nanoelectronic pulse generators and low power circuits) in an effort to realize nanoelectronics at high-speed and low-power operation. The target areas, like realization of semi-insulating GaSb, development of nanowire FET technologies, and design and demonstration of pulsegenerators for ultra wide band applications are selected to have a high impact factor within emerging niche-applications. These efforts constitute an independent program with links to the Nano-science and the Circuit design centers in Lund as well as to international collaboration partners, like University of Notre Dame, USA and Tokyo Institute of Technology, Japan.
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