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Title:
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
Journal of Crystal Growth
Type:
article
Keywords:
nanomaterials, nanostructures, metalorganic vapor phase epitaxy, semiconducting IIIV materials
Abstract:
In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
Year:
2003
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