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Title:
Resonant tunneling permeable base transistors with high transconductance
IEEE Electron Device Letters
Type:
article
Keywords:
resonant tunneling, gallium arsenide (GaAs), permeable base transistors, transistors, tungsten
Abstract:
A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.
Year:
2004
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