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- Referens:
- M. Jeppsson, K. Dick, H. Nilsson, N. Sköld, J. Wagner, P. Caroff, L. E. Wernersson:
Characterization of GaSb nanowires grown by MOVPE
Journal of Chrystal Growth, 14th International Conference on Metal Organic Vapor Phase Epitaxy, Metz, FRANCE, Vol. 310, No. 23, pp. 5119-5122, JUN 01-06, 2008. (BibTeX)
- Title:
- Characterization of GaSb nanowires grown by MOVPE
Journal of Chrystal Growth
- Type:
- conference paper
- Keywords:
- Gallium, Metalorganic vapor phase epitaxy, compounds, Antimonides, Nanowires
- Abstract:
- We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
- Year:
- 2008
- MODS XML
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