Anpassa utseende English Lunds universitet
Institutionen för EIT
toppbild
Utbildning Forskning Kontakt

Referens:
Title:
Band Structure Effects on the Scaling Properties of 111 InAs Nanowire MOSFETs
IEEE Transactions on Electron Devices
Type:
article
Keywords:
Band structure, field-effect transistor (FET), InAs, nanowire
Abstract:
We have investigated the scaling properties of 111 InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.
Year:
2009
MODS XML

Tillbaka

Senast uppdaterad:
Webbansvarig: Henrik Sjöland
Ansvarig utgivare: Prefekt
Institutionen för Elektro- och informationsteknik, LTH, Box 118, 221 00 Lund. Telefon: 046-222 00 00