lu.se

Electrical and Information Technology

Faculty of Engineering LTH | Lund University

Publications



Journal Articles

    2016

  1. J. Wu, K. Jansson, A. Shiri Babadi, M. Berg, E. Lind, L. E. Wernersson:
    RF Characterization of Vertical Wrap-Gated InAs/High-? Nanowire Capacitors
    IEEE Transactions on Electron Devices, Vol. 63, No. 2, pp. 584-589, 2016. (BibTeX) (More info)
  2. M. D. Thompson, A. Alhodaib, A. P. Craig, A. Robson, A. Aziz, A. Krier, J. Svensson, L. E. Wernersson, A. M. Sanchez, A. R. J. Marshall:
    Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
    Nano Letters, Vol. 16, No. 1, pp. 182-187, 2016. (BibTeX) (More info)
  3. K. Jansson, E. Lind, L. E. Wernersson:
    Ballistic modeling of InAs nanowire transistors
    Solid-State Electronics, Vol. 115, pp. 47-53, 2016. (BibTeX) (More info)
  4. F. Lindelöw, M. Heurlin, G. Otnes, V. Dagyte, D. Lindgren, O. Hultin, K. Storm, L. Samuelson, M. Borgström:
    Doping evaluation of InP nanowires for tandem junction solar cells
    Nanotechnology, Vol. 27, No. 6, pp. 065706-, 2016. (BibTeX) (More info)
  5. 2015

  6. J. Svensson, A. Dey, D. Jacobsson, L. E. Wernersson:
    III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
    Nano Letters, Vol. 15, No. 12, pp. 7898-7904, 2015. (BibTeX) (More info)
  7. C. Zota, D. Lindgren, L. E. Wernersson, E. Lind:
    Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
    ACS Nano, Vol. 9, No. 10, pp. 9892-9897, 2015. (BibTeX) (More info)
  8. G. Roll, J. Mo, E. Lind, S. Johansson, L. E. Wernersson:
    Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
    Applied Physics Letters, Vol. 106, No. 20, pp. 203503-, 2015. (BibTeX) (More info)
  9. M. Berg, J. Svensson, E. Lind, L. E. Wernersson:
    A transmission line method for evaluation of vertical InAs nanowire contacts
    Applied Physics Letters, Vol. 107, No. 23, pp. 232102-, 2015. (BibTeX) (More info)
  10. J. Mo, E. Lind, L. E. Wernersson:
    InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
    IEEE Transactions on Electron Devices, Vol. 62, No. 2, pp. 501-506, 2015. (BibTeX) (More info)
  11. L. Ohlsson, P. Fay, L. E. Wernersson:
    Picosecond dynamics in a millimetre-wave RTD-MOSFET wavelet generator
    Electronics Letters, Vol. 51, No. 21, pp. 1671-1672, 2015. (BibTeX) (More info)
  12. I. Vakili, L. Ohlsson, L. E. Wernersson, M. Gustafsson:
    Time-Domain System for Millimeter-Wave Material Characterization
    IEEE Transactions on Microwave Theory and Techniques, Vol. 63, No. 9, pp. 2915-2922, 2015. (BibTeX) (More info)
  13. L. E. Wernersson:
    III-V nanowires for logics and beyond
    Microelectronic Engineering, Vol. 147, pp. 344-348, 2015. (BibTeX) (More info)
  14. L. E. Wernersson:
    Narrow gap nanowires: From nanotechnology to RF-circuits on Si
    Applied Physics Reviews, Vol. 117, No. 11, pp. 112810-, 2015. (BibTeX) (More info)
  15. 2014

  16. B. Ganjipour, S. Sepehri, A. Dey, O. Tizno, B. M. Borg, K. Dick, L. Samuelson, L. E. Wernersson, C. Thelander:
    Electrical properties of GaSb/InAsSb core/shell nanowires.
    Nanotechnology, Vol. 25, No. 42, pp. 425201-, 2014. (BibTeX) (More info)
  17. A. Shiri Babadi, E. Lind, L. E. Wernersson:
    Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
    Applied Physics Reviews, Vol. 116, No. 21, pp. 214508-, 2014. (BibTeX) (More info)
  18. C. Zota, G. Roll, L. E. Wernersson, E. Lind:
    Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
    IEEE Transactions on Electron Devices, Vol. 61, No. 12, pp. 4078-4083, 2014. (BibTeX) (More info)
  19. C. Zota, L. E. Wernersson, E. Lind:
    In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
    IEEE Electron Device Letters, Vol. 35, No. 3, pp. 342-344, 2014. (BibTeX) (More info)
  20. E. Memisevic, E. Lind, L. E. Wernersson:
    Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
    Journal of Vacuum Science & Technology B, Vol. 32, No. 5, pp. 051211-, 2014. (BibTeX) (More info)
  21. S. Johansson, E. Memisevic, L. E. Wernersson, E. Lind:
    High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
    IEEE Electron Device Letters, Vol. 35, No. 5, pp. 518-520, 2014. (BibTeX) (More info)
  22. J. Mo, E. Lind, G. Roll, L. E. Wernersson:
    Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
    Applied Physics Letters, Vol. 105, No. 3, pp. 033516-, 2014. (BibTeX) (More info)
  23. J. Mo, E. Lind, L. E. Wernersson:
    Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
    IEEE Electron Device Letters, Vol. 35, No. 5, pp. 515-517, 2014. (BibTeX) (More info)
  24. M. Berg, K. M. Persson, J. Wu, E. Lind, H. Sjöland, L. E. Wernersson:
    InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
    Nanotechnology, Vol. 25, No. 48, pp. 485203-, 2014. (BibTeX) (More info)
  25. K. Jansson, E. Lind, L. E. Wernersson:
    Intrinsic Performance of InAs Nanowire Capacitors
    IEEE Transactions on Electron Devices, Vol. 61, No. 2, pp. 452-459, 2014. (BibTeX) (More info)
  26. J. Wallentin, M. Osterhoff, R. N. Wilke, K. M. Persson, L. E. Wernersson, M. Sprung, T. Salditt:
    Hard X-ray Detection Using a Single nm Diameter Nanowire
    Nano Letters, Vol. 14, No. 12, pp. 7071-7076, 2014. (BibTeX) (More info)
  27. K. M. Persson, M. Berg, H. Sjöland, E. Lind, L. E. Wernersson:
    InAs nanowire MOSFET differential active mixer on Si-substrate
    Electronics Letters, Vol. 50, No. 9, pp. 682-, 2014. (BibTeX) (More info)
  28. L. Ohlsson, T. Bryllert, D. Sjöberg, L. E. Wernersson:
    Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna
    IEEE Microwave and Wireless Components Letters, Vol. 24, No. 9, pp. 625-627, 2014. (BibTeX) (More info)
  29. C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L. E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz:
    High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
    AIP Advances, Vol. 4, No. 4, pp. 047108-, 2014. (BibTeX) (More info)
  30. H. Riel, L. E. Wernersson, M. Hong, J. A. del Alamo:
    III-V compound semiconductor transistors-from planar to nanowire structures
    Mrs Bulletin, Vol. 39, No. 8, pp. 668-677, 2014. (BibTeX) (More info)
  31. A. Jurgilaitis, H. Enquist, M. Harb, K. Dick, M. Borg, R. Nüske, L. E. Wernersson, J. Larsson:
    Measurements of light absorption efficiency in InSb nanowires
    Structural Dynamics, Vol. 1, No. 1, pp. 014502-, 2014. (BibTeX) (More info)
  32. A. Jurgilaitis, H. Enquist, P. Andreasson, A. I. H. Persson, M. Borg, P. Caroff, K. Dick, M. Harb, H. Linke, R. Nüske, L. E. Wernersson, J. Larsson:
    Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
    Nano Letters, Vol. 14, No. 2, pp. 541-546, 2014. (BibTeX) (More info)
  33. 2013

  34. A. Dey, M. Borg, B. Ganjipour, M. Ek, K. Dick Thelander, E. Lind, C. Thelander, L. E. Wernersson:
    High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
    IEEE Electron Device Letters, Vol. 34, No. 2, pp. 211-213, 2013. (BibTeX) (More info)
  35. A. Dey, J. Svensson, M. Ek, E. Lind, C. Thelander, L. E. Wernersson:
    Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
    Nano Letters, Vol. 13, No. 12, pp. 5919-5924, 2013. (BibTeX) (More info)
  36. K. M. Persson, M. Berg, M. Borg, J. Wu, S. Johansson, J. Svensson, K. Jansson, E. Lind, L. E. Wernersson:
    Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
    IEEE Transactions on Electron Devices, Vol. 60, No. 9, pp. 2761-2767, 2013. (BibTeX) (More info)
  37. J. Svensson, N. Anttu, N. Vainorius, M. Borg, L. E. Wernersson:
    Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
    Nano Letters, Vol. 13, No. 4, pp. 1380-1385, 2013. (BibTeX) (More info)
  38. K. M. Persson, M. Berg, M. Borg, J. Wu, S. Johansson, J. Svensson, K. Jansson, E. Lind, L. E. Wernersson:
    Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
    IEEE Transactions on Electron Devices, Vol. 60, No. 9, pp. 2761-2767, 2013. (BibTeX) (More info)
  39. J. Wu, M. Borg, D. Jacobsson, K. Dick, L. E. Wernersson:
    Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
    Journal of Crystal Growth, Vol. 383, pp. 158-165, 2013. (BibTeX) (More info)
  40. S. Johansson, M. Berg, K. M. Persson, E. Lind:
    A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
    IEEE Transactions on Electron Devices, Vol. 60, No. 2, pp. 776-781, 2013. (BibTeX) (More info)
  41. K. M. Persson, B. G. Malm, L. E. Wernersson:
    Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
    Applied Physics Letters, Vol. 103, No. 3, pp. 033508-, 2013. (BibTeX) (More info)
  42. I. Vakili, L. Ohlsson, M. Gustafsson, L. E. Wernersson:
    Wideband and Non-Dispersive Wavelet Transmission using Leaky Lens Antenna
    Electronics Letters, Vol. 49, No. 5, pp. 321-322, 2013. (BibTeX) (More info)
  43. L. Ohlsson, T. Bryllert, C. Gustafson, D. Sjöberg, M. Egard, M. Ärlelid, L. E. Wernersson:
    Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration
    IEEE Transactions on Antennas and Propagation, Vol. 61, No. 4, pp. 1599-1607, 2013. (BibTeX) (More info)
  44. O. Persson, E. Lind, E. Lundgren, J. Rubio-Zuazo, G. R. Castro, L. E. Wernersson, A. Mikkelsen, R. Timm:
    Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
    AIP Advances, Vol. 3, No. 7, pp. 072131-, 2013. (BibTeX) (More info)
  45. C. H. Wang, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, R. Contreras-Guerrero, M. Edirisooriya, J. S. Rojas-Ramirez, G. Vellianitis, R. Oxland, M. C. Holland, C. H. Hsieh, P. Ramvall, E. Lind, W. C. Hsu, L. E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz:
    InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
    Applied Physics Letters, Vol. 103, No. 14, pp. 143510-, 2013. (BibTeX) (More info)
  46. M. Borg, L. E. Wernersson:
    Synthesis and properties of antimonide nanowires
    Nanotechnology, Vol. 24, No. 20, pp. 202001-, 2013. (BibTeX) (More info)
  47. P. Ramvall, C. H. Wang, G. Astromskas, G. Vellianitis, M. Holland, R. Droopad, L. Samuelson, L. E. Wernersson, M. Paslack, C. H. Diaz:
    MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
    Journal of Crystal Growth, Vol. 374, pp. 43-48, 2013. (BibTeX) (More info)
  48. M. Borg, J. Johansson, K. Storm, K. Deppert:
    Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
    Journal of Crystal Growth, Vol. 366, pp. 15-19, 2013. (BibTeX) (More info)
  49. M. Ek, M. Borg, J. Johansson, K. Dick:
    Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.
    ACS Nano, Vol. 7, No. 4, pp. 3668-3675, 2013. (BibTeX) (More info)
  50. 2012

  51. M. Borg, M. Ek, B. Ganjipour, A. Dey, K. Dick, L. E. Wernersson, C. Thelander:
    Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
    Applied Physics Letters, Vol. 101, No. 4, 2012. (BibTeX) (More info)
  52. A. Dey, J. Svensson, M. Borg, M. Ek, L. E. Wernersson:
    Single InAs/GaSb Nanowire Low-Power CMOS Inverter
    Nano Letters, 2012. (BibTeX) (More info)
  53. A. Dey, C. Thelander, E. Lind, K. Dick Thelander, M. Borg, M. Borgström, P. Nilsson, L. E. Wernersson:
    High-Performance InAs Nanowire MOSFETs
    IEEE Electron Device Letters, Vol. 33, No. 6, pp. 791-793, 2012. (BibTeX) (More info)
  54. N. Lindahl, D. Midtvedt, J. Svensson, O. A. Nerushev, N. Lindvall, A. Isacsson, E. E. B. Campbell:
    Determination of the Bending Rigidity of Graphene via Electrostatic Actuation of Buckled Membranes
    Nano Letters, Vol. 12, No. 7, pp. 3526-3531, 2012. (BibTeX) (More info)
  55. J. Wu, E. Lind, R. Timm, M. Hjort, A. Mikkelsen, L. E. Wernersson:
    Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
    Applied Physics Letters, Vol. 100, No. 13, pp. 132905-132905-3, 2012. (BibTeX) (More info)
  56. K. Jansson, E. Lind, L. E. Wernersson:
    Performance Evaluation of III?V Nanowire Transistors
    IEEE Transactions on Electron Devices, Vol. 59, No. 9, pp. 2375-2382, 2012. (BibTeX) (More info)
  57. M. Egard, L. Ohlsson, M. Ärlelid, K. M. Persson, M. Borg, F. Lenrick, R. Wallenberg, E. Lind, L. E. Wernersson:
    High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
    IEEE Electron Device Letters, Vol. 33, No. 3, pp. 369-371, 2012. (BibTeX) (More info)
  58. M. Egard, M. Ärlelid, L. Ohlsson, M. Borg, E. Lind, L. E. Wernersson:
    In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
    IEEE Electron Device Letters, Vol. 33, No. 7, pp. 970-972, 2012. (BibTeX) (More info)
  59. S. Gorji Ghalamestani, S. Johansson, M. Borg, E. Lind, K. Dick, L. E. Wernersson:
    Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
    Nanotechnology, Vol. 23, No. 1, pp. 015302-, 2012. (BibTeX) (More info)
  60. G. Astromskas, M. Borg, L. E. Wernersson:
    Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
    Journal of Vacuum Science and Technology B, Vol. 30, No. 5, pp. 051202-, 2012. (BibTeX) (More info)
  61. B. Ganjipour, M. Ek, M. Borg, K. Dick, M. E. Pistol, L. E. Wernersson, C. Thelander:
    Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
    Applied Physics Letters, Vol. 101, No. 10, pp. 103501-, 2012. (BibTeX) (More info)
  62. S. Gorji Ghalamestani, M. Heurlin, L. E. Wernersson, S. Lehmann, K. Dick:
    Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Nanotechnology, Vol. 23, No. 28, pp. 285601-, 2012. (BibTeX) (More info)
  63. C. J. Delker, S. Kim, M. Borg, L. E. Wernersson, D. B. Janes:
    1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
    IEEE Transactions on Electron Devices, Vol. 59, No. 7, pp. 1980-1987, 2012. (BibTeX) (More info)
  64. K. Dick, J. Bolinsson, M. Borg, J. Johansson:
    Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
    Nano Letters, Vol. 12, No. 6, pp. 3200-3206, 2012. (BibTeX) (More info)
  65. J. Gustafson, E. Lundgren, A. Mikkelsen, M. Borg, J. Klikovits, M. Schmidt, P. Varga, J. N. Andersen:
    The Rh(100)-(3 × 1)-2O structure.
    Journal of Physics: Condensed Matter, Vol. 24, No. 22, pp. 225006-, 2012. (BibTeX) (More info)
  66. 2011

  67. C. Thelander, P. Caroff, S. Plissard, A. Dey, K. Dick:
    Effects of crystal phase mixing on the electrical properties of InAs nanowires
    Nano letters, Vol. 11, No. April 29, 2011, pp. 2424-2429, 2011. (BibTeX) (More info)
  68. M. Ek, M. Borg, A. Dey, B. Ganjipour, C. Thelander, L. E. Wernersson, K. Dick Thelander:
    Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
    Crystal Growth & Design, Vol. 11, No. 10, pp. 4588-4593, 2011. (BibTeX) (More info)
  69. M. Borg, M. Ek, K. Dick Thelander, B. Ganjipour, A. Dey, C. Thelander, L. E. Wernersson:
    Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
    Applied Physics Letters, Vol. 99, pp. 203101-, 2011. (BibTeX) (More info)
  70. B. Ganjipour, A. Dey, M. Borg, M. Ek, M. E. Pistol, K. Dick Thelander, L. E. Wernersson, C. Thelander:
    High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
    Nano Letters, Vol. 11, No. 10, pp. 4222-4226, 2011. (BibTeX) (More info)
  71. B. Mandl, A. Dey, J. Stangl, M. Cantoro, L. E. Wernersson, G. Bauer, L. Samuelson, K. Deppert, C. Thelander:
    Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
    Journal of Crystal Growth, Vol. 334, No. 1, pp. 51-56, 2011. (BibTeX) (More info)
  72. J. Svensson, N. Lindahl, H. Yun, M. Seo, D. Midtvedt, Y. Tarakanov, N. Lindvall, O. Nerushev, J. Kinaret, S. Lee, E. E. B. Campbell:
    Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates.
    Nano letters, Vol. 11, pp. 3569-3575, 2011. (BibTeX) (More info)
  73. J. Svensson, E. E. B. Campbell:
    Schottky barriers in carbon nanotube-metal contacts
    Applied Physics Reviews, Vol. 110, No. 11, pp. 111101-, 2011. (BibTeX) (More info)
  74. M. Ärlelid, M. Egard, L. Ohlsson, E. Lind, L. E. Wernersson:
    Impulse-based 4 Gbit/s radio link at 60 GHz
    Electronics Letters, Vol. 47, No. 7, pp. 467-U70, 2011. (BibTeX) (More info)
  75. M. Borg, J. Kembro, J. Pedersen Notander, C. Petersson, L. Ohlsson:
    Conflict management in student groups - a teacher?s perspective in higher education
    Högre utbildning, Vol. 1, No. 2, pp. 111-124, 2011. (BibTeX) (More info)
  76. S. Johansson, M. Egard, S. Gorji Ghalamestani, M. Borg, M. Berg, L. E. Wernersson, E. Lind:
    RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
    IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 10, pp. 2733-2738, 2011. (BibTeX) (More info)
  77. S. Gorji Ghalamestani, M. Berg, K. Dick, L. E. Wernersson:
    High quality InAs and GaSb thin layers grown on Si (111)
    Journal of Crystal Growth, Vol. 332, No. 1, pp. 12-16, 2011. (BibTeX) (More info)
  78. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
    Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
    IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 3, pp. 672-677, 2011. (BibTeX) (More info)
  79. J. Sun, E. Lind, I. Maximov, H. Xu:
    Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
    IEEE Electron Device Letters, Vol. 32, No. 2, pp. 131-133, 2011. (BibTeX) (More info)
  80. E. Lind, L. E. Wernersson:
    Design of RF Properties for Vertical Nanowire MOSFETs
    IEEE Transactions on Nanotechnology, Vol. 10, No. 4, pp. 668-673, 2011. (BibTeX) (More info)
  81. H. Nilsson, P. Caroff, E. Lind, M. E. Pistol, C. Thelander, L. E. Wernersson:
    Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
    Applied Physics Reviews, Vol. 110, No. 6, 2011. (BibTeX) (More info)
  82. H. Nilsson, M. Deng, P. Caroff, C. Thelander, L. Samuelson, L. E. Wernersson, H. Xu:
    InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
    IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, No. 4, pp. 907-914, 2011. (BibTeX) (More info)
  83. R. Timm, M. Hjort, A. Fian, M. Borg, C. Thelander, J. N. Andersen, L. E. Wernersson, A. Mikkelsen:
    Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
    Applied Physics Letters, Vol. 99, No. 22, pp. 222907-1-222907-3, 2011. (BibTeX) (More info)
  84. B. Ganjipour, H. Nilsson, M. Borg, L. E. Wernersson, L. Samuelson, H. Xu, C. Thelander:
    GaSb nanowire single-hole transistor
    Applied Physics Letters, Vol. 99, No. 26, pp. 262104-, 2011. (BibTeX) (More info)
  85. M. Borg, K. Dick Thelander, J. Eymery, L. E. Wernersson:
    Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
    Applied Physics Letters, Vol. 98, No. 11, pp. 113104-, 2011. (BibTeX) (More info)
  86. G. Astromskas, K. Storm, L. E. Wernersson:
    Transient studies on InAs/HfO2 nanowire capacitors
    Applied Physics Letters, Vol. 98, No. 1, pp. 013501-, 2011. (BibTeX) (More info)
  87. 2010

  88. B. Mandl, J. Stangl, E. Hilner, A. Zakharov, K. Hillerich, A. Dey, L. Samuelson, G. Bauer, K. Deppert, A. Mikkelsen:
    Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
    Nano Letters, Vol. 10, No. Online October 7, 2010, pp. 4443-4449, 2010. (BibTeX) (More info)
  89. K. M. Persson, E. Lind, A. Dey, C. Thelander, H. Sjöland, L. E. Wernersson:
    Low-frequency noise in vertical InAs nanowire FETs
    IEEE Electron Device Letters, Vol. 31, No. 5, pp. 428-430, 2010. (BibTeX) (More info)
  90. M. Egard, S. Johansson, A. C. Johansson, K. M. Persson, A. Dey, M. Borg, C. Thelander, L. E. Wernersson, E. Lind:
    Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
    Nano letters, Vol. 10, No. 3, pp. 809-812, 2010. (BibTeX) (More info)
  91. C. Larsen, M. Ärlelid, E. Lind, L. E. Wernersson:
    Modelling and optimization of III/V transistors with matrices of nanowires
    Solid-State Electronics, Vol. 54, No. 12, pp. 1505-1510, 2010. (BibTeX) (More info)
  92. M. Ärlelid, M. Egard, E. Lind, L. E. Wernersson:
    Coherent V-Band Pulse Generator for Impulse Radio BPSK
    IEEE Microwave and Wireless Components Letters, Vol. 20, No. 7, pp. 414-416, 2010. (BibTeX) (More info)
  93. E. Lind, Y. M. Niquet, H. Mera, L. E. Wernersson:
    Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
    Applied Physics Letters, Vol. 96, No. 23, pp. 233507-, 2010. (BibTeX) (More info)
  94. H. Nilsson, P. Caroff, C. Thelander, E. Lind, O. Karlström, L. E. Wernersson:
    Temperature dependent properties of InSb and InAs nanowire field-effect transistors
    Applied Physics Letters, Vol. 96, No. 15, 2010. (BibTeX) (More info)
  95. R. Timm, F. Alexander, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L. E. Wernersson, A. Mikkelsen:
    Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
    Applied Physics Letters, Vol. 97, pp. 132904-, 2010. (BibTeX) (More info)
  96. L. E. Wernersson, C. Thelander, E. Lind, L. Samuelson:
    III-V Nanowires-Extending a Narrowing Road
    Proceedings of the IEEE, Vol. 98, No. 12, pp. 2047-2060, 2010. (BibTeX) (More info)
  97. M. Borg, K. Dick, B. Ganjipour, M. E. Pistol, L. E. Wernersson, C. Thelander:
    InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
    Nano letters, Vol. 10, No. Online August 24, 2010, pp. 4080-4085, 2010. (BibTeX) (More info)
  98. G. Astromskas, K. Storm, O. Karlström, P. Caroff, M. Borgström, L. E. Wernersson:
    Doping Incorporation in InAs nanowires characterized by capacitance measurements
    Applied Physics Reviews, Vol. 108, pp. 054306-, 2010. (BibTeX) (More info)
  99. H. Nilsson, O. Karlström, M. Larsson, P. Caroff, J. Pedersen, L. Samuelson, A. Wacker, L. E. Wernersson, H. Xu:
    Correlation-induced conductance suppression at level degeneracy in a quantum dot.
    Physical Review Letters, Vol. 104, No. 18, pp. 186804-, 2010. (BibTeX) (More info)
  100. V. Favre-Nicolin, F. Mastropietro, J. Eymery, D. Camacho, Y. M. Niquet, M. Borg, M. Messing, L. E. Wernersson, R. E. Algra, E. P. A. M. Bakkers, T. H. Metzger, R. Harder, I. K. Robinson:
    Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
    New Journal of Physics, Vol. 12, pp. 035013-, 2010. (BibTeX) (More info)
  101. 2009

  102. S. Ghatnekar-Nilsson, I. Karlsson, A. Kvennefors, G. Luo, V. Zela, M. Ärlelid, T. Parker, L. Montelius, A. Litwin:
    A new multifunctional platform based on high aspect ratio interdigitated NEMS structures
    Nanotechnology, Vol. 20, No. 17, pp. 175502-, 2009. (BibTeX) (More info)
  103. L. E. Wernersson, M. Ärlelid, M. Egard, E. Lind:
    Gated tunnel diode in oscillator applications with high frequency tuning
    Solid-State Electronics, Vol. 53, No. 3, pp. 292-296, 2009. (BibTeX) (More info)
  104. M. Egard, M. Ärlelid, E. Lind, G. Astromskas, L. E. Wernersson:
    20 GHz Wavelet Generator Using a Gated Tunnel Diode
    IEEE Microwave and Wireless Components Letters, Vol. 19, No. 6, pp. 386-388, 2009. (BibTeX) (More info)
  105. S. Ghatnekar-Nilsson, I. Karlsson, A. Kvennefors, G. Luo, V. Zela, M. Ärlelid, T. Parker, L. Montelius, L. Andrej:
    A new multifunctional platform based on high-aspect ratio interdigitated NEMS structures
    Nanotechnology, Vol. 20, No. 17, pp. 1-6, 2009. (BibTeX) (More info)
  106. E. Lind, M. Persson, Y. M. Niquet, L. E. Wernersson:
    Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
    IEEE Transactions on Electron Devices, Vol. 56, No. 2, pp. 201-205, 2009. (BibTeX) (More info)
  107. S. Roddaro, P. Caroff, G. Biasiol, F. Rossi, C. Bocchi, K. Nilsson, L. Fröberg, J. B. Wagner, L. Samuelson, L. E. Wernersson, L. Sorba:
    Growth of vertical InAs nanowires on heterostructured substrates
    Nanotechnology, Vol. 20, No. 28, pp. 285303-, 2009. (BibTeX) (More info)
  108. G. Astromskas, R. Wallenberg, L. E. Wernersson:
    Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
    Journal of Vacuum Science and Technology B, Vol. 27, No. 5, pp. 2222-2226, 2009. (BibTeX) (More info)
  109. P. Caroff, M. Messing, M. Borg, K. Dick Thelander, K. Deppert, L. E. Wernersson:
    InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
    Nanotechnology, Vol. 20, No. 49, pp. 495606-, 2009. (BibTeX) (More info)
  110. H. Nilsson, P. Caroff, C. Thelander, M. Larsson, J. Wagner, L. E. Wernersson, L. Samuelson, H. Xu:
    Giant, level-dependent g factors in InSb nanowire quantum dots.
    Nano letters, Vol. 9, No. 9, pp. 3151-3156, 2009. (BibTeX) (More info)
  111. 2008

  112. L. Fröberg, C. Rehnstedt, C. Thelander, E. Lind, L. E. Wernersson, L. Samuelson:
    Heterostructure Barriers in Wrap Gated Nanowire FETs
    IEEE Electron Device Letters, Vol. 29, No. 9, pp. 981-983, 2008. (BibTeX) (More info)
  113. P. Caroff, J. Wagner, K. Dick, H. Nilsson, M. Jeppsson, K. Deppert, L. Samuelson, R. Wallenberg, L. E. Wernersson:
    High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
    Small, Vol. 4, No. 7, pp. 878-882, 2008. (BibTeX) (More info)
  114. C. Thelander, L. Fröberg, C. Rehnstedt, L. Samuelson, L. E. Wernersson:
    Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
    IEEE Electron Device Letters, Vol. 29, No. 3, pp. 206-208, 2008. (BibTeX) (More info)
  115. C. Rehnstedt, C. Thelander, L. Fröberg, B. J. Ohlsson, L. Samuelson, L. E. Wernersson:
    Drive current and threshold voltage control in vertical InAs wrap-gate transistors
    Electronics Letters, Vol. 44, No. 3, pp. 236-237, 2008. (BibTeX) (More info)
  116. C. Thelander, C. Rehnstedt, L. E. Froberg, E. Lind, T. Martensson, P. Caroff, T. Lowgren, B. J. Ohlsson, L. Samuelson, L. E. Wernersson:
    Development of a Vertical Wrap-Gated InAs FET
    IEEE Transactions on Electron Devices, Vol. 55, No. 11, pp. 3030-3036, 2008. (BibTeX) (More info)
  117. C. Rehnstedt, T. Mårtensson, C. Thelander, L. Samuelson, L. E. Wernersson:
    Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
    IEEE Transactions on Electron Devices, Vol. 55, No. 11, pp. 3037-3041, 2008. (BibTeX) (More info)
  118. M. J. Kumar, M. A. Reed, G. A. J. Amaratunga, G. M. Cohen, D. B. Janes, C. M. Lieber, M. Meyyappan, L. E. Wernersson, K. L. Wang, R. S. Chau, T. I. Kamins, M. Lundstrom, B. Yu, C. Zhou:
    Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
    IEEE Transactions on Nanotechnology, Vol. 7, No. 6, pp. 643-650, 2008. (BibTeX) (More info)
  119. M. J. Kumar, M. A. Reed, G. A. J. Amaratunga, G. M. Cohen, D. B. Janes, C. M. Lieber, M. Meyyappan, L. E. Wernersson, K. L. Wang, R. S. Chau, T. I. Kamins, M. Lundstrom, B. Yu, C. Zhou:
    Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
    IEEE Transactions on Electron Devices, Vol. 55, No. 11, pp. 2813-2819, 2008. (BibTeX) (More info)
  120. O. Karlström, A. Wacker, K. Nilsson, G. Astromskas, S. Roddaro, L. Samuelson, L. E. Wernersson:
    Analysing the capacitance?voltage measurements of vertical wrapped-gated nanowires
    Nanotechnology, Vol. 19, No. 43, pp. 435201-, 2008. (BibTeX) (More info)
  121. S. Roddaro, K. Nilsson, G. Astromskas, L. Samuelson, L. E. Wernersson, O. Karlström, A. Wacker:
    InAs nanowire metal-oxide-semiconductor capacitors
    Applied Physics Letters, Vol. 92, No. 25, pp. 253509-, 2008. (BibTeX) (More info)
  122. M. Borg, K. Dick Thelander, J. Wagner, P. Caroff, K. Deppert, L. Samuelson, L. E. Wernersson:
    GaAs/GaSb nanowire heterostructures grown by MOVPE
    Journal of Crystal Growth, Vol. 310, No. 18, pp. 4115-4121, 2008. (BibTeX) (More info)
  123. 2007

  124. L. E. Wernersson, E. Lind, L. Samuelson, T. Lowgren, J. Ohlsson:
    Nanowire field-effect transistor
    Japanese Journal of Applied Physics, Vol. 46, No. 4B, pp. 2629-2631, 2007. (BibTeX) (More info)
  125. 2006

  126. E. Lind, A. Persson, L. Samuelson, L. E. Wernersson:
    Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
    Nano Letters, Vol. 6, No. 9, pp. 1842-1846, 2006. (BibTeX) (More info)
  127. T. Bryllert, L. E. Wernersson, T. Lowgren, L. Samuelson:
    Vertical wrap-gated nanowire transistors
    Nanotechnology, Vol. 17, No. 11, pp. S227-S230, 2006. (BibTeX) (More info)
  128. T. Bryllert, L. E. Wernersson, L. Fröberg, L. Samuelson:
    Vertical high-mobility wrap-gated InAs nanowire transistor
    IEEE Electron Device Letters, Vol. 27, No. 5, pp. 323-325, 2006. (BibTeX) (More info)
  129. 2005

  130. L. E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. H. Kosel, A. Seabaugh:
    A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
    IEEE Transactions on Nanotechnology, Vol. 4, No. 5, pp. 594-598, 2005. (BibTeX) (More info)
  131. L. E. Wernersson, E. Lind, J. Lembke, B. Martinsson, W. Seifert:
    InAs epitaxial lateral overgrowth of W masks
    Journal of Crystal Growth, Vol. 280, No. 1-2, pp. 81-86, 2005. (BibTeX) (More info)
  132. 2004

  133. L. E. Wernersson, P. Lindström, A. Nauen, E. Lind:
    Nanoelectronic pulse generators based on gated resonant tunnelling diodes
    International Journal of Circuit Theory and Applications, Vol. 32, No. 5, pp. 431-437, 2004. (BibTeX) (More info)
  134. E. Lind, P. Lindström, L. E. Wernersson:
    Resonant tunneling permeable base transistors with high transconductance
    IEEE Electron Device Letters, Vol. 25, No. 10, pp. 678-680, 2004. (BibTeX) (More info)
  135. L. E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, A. Seabaugh:
    SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
    Electronics Letters, Vol. 40, No. 1, pp. 83-85, 2004. (BibTeX) (More info)
  136. 2003

  137. L. E. Wernersson, E. Lind, P. Lindström, P. Andreani:
    Highly functional tunnelling devices integrated in 3D
    International Journal of Circuit Theory and Applications, Vol. 31, No. 1, pp. 105-117, 2003. (BibTeX) (More info)
  138. E. Lind, B. Gustafson, I. Pietzonka, L. E. Wernersson:
    Tunneling spectroscopy of a quantum dot through a single impurity
    Physical Review B (Condensed Matter and Materials Physics), Vol. 68, No. 3, pp. 4-4, 2003. (BibTeX) (More info)
  139. Y. Miyamoto, R. Yamamoto, H. Maeda, K. Takeuchi, N. Machida, L. E. Wernersson, K. Furuya:
    InP hot electron transistors with a buried metal gate
    Japanese Journal of Applied Physics, Vol. 42, No. 12, pp. 7221-7226, 2003. (BibTeX) (More info)
  140. T. Bryllert, M. Borgström, L. E. Wernersson, W. Seifert, L. Samuelson:
    Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
    Applied Physics Letters, Vol. 82, No. 16, pp. 2655-2657, 2003. (BibTeX) (More info)
  141. M. Borgström, T. Bryllert, T. Sass, L. E. Wernersson, L. Samuelson, W. Seifert:
    Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
    Journal of Crystal Growth, Vol. 248, pp. 310-316, 2003. (BibTeX) (More info)
  142. T. Sass, I. Pietzonka, M. Borgström, B. Gustafson, L. E. Wernersson, W. Seifert:
    Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
    Journal of Crystal Growth, Vol. 248, pp. 375-379, 2003. (BibTeX) (More info)
  143. 2002

  144. L. E. Wernersson, R. Yamamoto, Y. Miyamoto, E. Lind, I. Pietzonka, W. Seifert, L. Samuelson, K. Furuya:
    Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
    Institute of Physics Conference Series, Vol. 170, pp. 81-85, 2002. (BibTeX) (More info)
  145. E. Lind, I. Pietzonka, P. Lindström, W. Seifert, L. E. Wernersson:
    Three-dimensional integrated resonant tunneling transistor with multiple peaks
    Applied Physics Letters, Vol. 81, No. 10, pp. 1905-1907, 2002. (BibTeX) (More info)
  146. E. Lind, L. E. Wernersson, I. Pietzonka, W. Seifert:
    Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
    IEEE Transactions on Electron Devices, Vol. 49, No. 6, pp. 1066-1069, 2002. (BibTeX) (More info)
  147. M. Achermann, U. Siegner, L. E. Wernersson, U. Keller:
    Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
    Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, pp. 819-822, 2002. (BibTeX) (More info)
  148. S. Lee, C. Zetterling, M. Ostling, I. Åberg, M. Magnusson, K. Deppert, L. E. Wernersson, L. Samuelson, A. Litwin:
    Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
    Solid-State Electronics, Vol. 46, No. 9, pp. 1433-1440, 2002. (BibTeX) (More info)
  149. S. Lee, C. Zetterling, M. Ostling, I. Aberg, M. Magnusson, K. Deppert, L. E. Wernersson, L. Samuelson, A. Litwin:
    Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
    Materials Science Forum, Vol. 389-3, No. 2, pp. 937-940, 2002. (BibTeX) (More info)
  150. L. E. Wernersson, B. Gustafson, A. Gustafsson, M. Borgström, I. Pietzonka, T. Sass, W. Seifert, L. Samuelson:
    Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
    Applied Surface Science, Vol. 190, No. 1, pp. 252-257, 2002. (BibTeX) (More info)
  151. S. Ohki, H. Funato, M. Suhara, T. Okumura, L. E. Wernersson, W. Seifert:
    A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
    Applied Surface Science, Vol. 190, No. 1-4, pp. 288-293, 2002. (BibTeX) (More info)
  152. M. Achermann, U. Siegner, L. E. Wernersson, U. Keller:
    Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
    Applied Surface Science, Vol. 190, No. 1-4, pp. 513-516, 2002. (BibTeX) (More info)
  153. T. Bryllert, M. Borgström, T. Sass, B. Gustafson, L. Landin, L. E. Wernersson, W. Seifert, L. Samuelson:
    Designed emitter states in resonant tunneling through quantum dots
    Applied Physics Letters, Vol. 80, No. 15, pp. 2681-2683, 2002. (BibTeX) (More info)
  154. I. Aberg, K. Deppert, M. Magnusson, I. Pietzonka, W. Seifert, L. E. Wernersson, L. Samuelson:
    Nanoscale tungsten aerosol particles embedded in GaAs
    Applied Physics Letters, Vol. 80, No. 16, pp. 2976-2978, 2002. (BibTeX) (More info)
  155. L. E. Wernersson, M. Borgström, B. Gustafson, A. Gustafsson, I. Pietzonka, M. E. Pistol, T. Sass, W. Seifert, L. Samuelson:
    Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
    Applied Physics Letters, Vol. 80, No. 10, pp. 1841-1843, 2002. (BibTeX) (More info)
  156. M. Achermann, F. Morier-Genoud, W. Seifert, L. E. Wernersson, U. Siegner, U. Keller:
    Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
    Physical Review B (Condensed Matter and Materials Physics), Vol. 65, No. 4, pp. 045322-, 2002. (BibTeX) (More info)
  157. B. Gustafson, D. Csontos, M. Suhara, L. E. Wernersson, W. Seifert, H. Xu, L. Samuelson:
    Coupling between lateral modes in a vertical resonant tunneling structure
    Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, pp. 950-953, 2002. (BibTeX) (More info)
  158. L. E. Wernersson, K. Georgsson, A. Gustafsson, A. Löfgren, L. Montelius, N. Nilsson, H. Pettersson, W. Seifert, L. Samuelson, J. O. Malm:
    Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
    Journal of Vacuum Science and Technology B, Vol. 20, No. 2, pp. 580-589, 2002. (BibTeX) (More info)

Conference Papers (Peer reviewed)

    2014

  1. A. Dey, E. Lind, J. Svensson, M. Ek, C. Thelander, L. E. Wernersson:
    Design of Radial Nanowire Tunnel Field-Effect Transistors
    2014 72nd Annual Device Research Conference (DRC), Santa Barbara, CA, pp. 81-82, JUN 22-25, 2014. (BibTeX) (More info)
  2. C. Zota, L. E. Wernersson, E. Lind:
    High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
    26th International Conference on Indium Phosphide and Related Materials (IPRM), Montpellier, France, MAY 11-15, 2014. (BibTeX) (More info)
  3. C. Zota, L. E. Wernersson, E. Lind:
    In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
    2014 72nd Annual Device Research Conference (DRC), Santa Barbara, CA, pp. 209-210, JUN 22-25, 2014. (BibTeX) (More info)
  4. S. Johansson, E. Memisevic, L. E. Wernersson, E. Lind:
    RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
    26th International Conference on Indium Phosphideand Related Materials (IPRM), 26th International Conference on Indium Phosphide and Related Materials (IPRM), Montpellier, FRANCE, MAY 11-15, 2014. (BibTeX) (More info)
  5. J. Mo, E. Lind, L. E. Wernersson:
    In GaAs MOSFETs with InP Drain
    2014 72nd Annyal Device Research Conference (DRC), 72nd Annual Device Research Conference (DRC), Santa Barbara, CA, pp. 119-120, JUN 22-25, 2014. (BibTeX) (More info)
  6. J. Mo, E. Lind, L. E. Wernersson:
    Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
    26th International Conference on Indium Phosphideand Related Materials (IPRM), 26th International Conference on Indium Phosphide and Related Materials (IPRM), Montpellier, FRANCE, MAY 11-15, 2014. (BibTeX) (More info)
  7. M. Berg, K. M. Persson, E. Lind, H. Sjöland, L. E. Wernersson:
    Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
    26th International Conference on Indium Phosphideand Related Materials (IPRM), 26th International Conference on Indium Phosphide and Related Materials (IPRM), Montpellier, FRANCE, MAY 11-15, 2014. (BibTeX) (More info)
  8. L. E. Wernersson:
    III-V Nanowire MOSFETs in RF-Applications
    ECS Transactions, Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society, Cancun, Mexico, Vol. 64, No. 17, pp. 69-73, Oct 05-09, 2014. (BibTeX) (More info)
  9. P. Nilsson, P. Andreani, K. Kuchcinski, J. Rodrigues, H. Sjöland, M. Törmänen, L. E. Wernersson, V. Öwall:
    Lessons from Ten Years of the International Master?s Program in System-on-Chip
    The 10th European Workshop on Microelectronics Education (EWME 2014), Tallinn, Estonia, 2014-05-16. (BibTeX) (More info)
  10. 2013

  11. S. Johansson, J. Mo, E. Lind:
    Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
    2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 43rd Conference on European Solid-State Device Research, Bucharest, ROMANIA, pp. 53-56, 2013-09-16/2013-09-20. (BibTeX) (More info)
  12. K. M. Persson, M. Berg, E. Lind, L. E. Wernersson:
    1/f-noise in Vertical InAs Nanowire Transistors
    2013 International Conference on Indium Phosphide and Related Materials (IPRM), 25th International Conference on Indium Phosphide and Related Materials (IPRM), Kobe, Japan, pp. 1-2, May 19-23, 2013. (BibTeX) (More info)
  13. I. Vakili, L. Ohlsson, M. Gustafsson, L. E. Wernersson:
    Pulse transmission using leaky lens antenna and RTD-MOSFET wavelet generator
    7th European Conference on Antennas and Propagation (EuCAP 2013), Gothenburg, pp. 324-325, 2013-04-08/2013-04-12. (BibTeX) (More info)
  14. M. Egard, M. Ärlelid, L. Ohlsson, M. Borg, E. Lind, L. E. Wernersson:
    Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
    2013 International Conference on Indium Phosphide and Related Materials (IPRM), 25th International Conference on Indium Phosphide and Related Materials (IPRM), Kobe, Japan, pp. 1-2, May 19-23, 2013. (BibTeX) (More info)
  15. E. Lind, S. Johansson:
    Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements
    ECS Transactions, China Semiconductor Technology International Conference (CSTIC), Shanghai, China, Vol. 52, No. 1, pp. 415-419, Mars 17-18, 2013. (BibTeX) (More info)
  16. 2012

  17. A. Dey, M. Borg, B. Ganjipour, M. Ek, K. Dick Thelander, E. Lind, P. Nilsson, C. Thelander, L. E. Wernersson:
    High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
    Device research conference, 70th Annual Device Research Conference (DRC), University Park, TX, pp. 205-206, 20120618. (BibTeX) (More info)
  18. A. Dey, C. Thelander, E. Lind, M. Borgström, M. Borg, P. Nilsson, L. E. Wernersson:
    High-performance 15 nm diameter InAs nanowire ?-gate MOSFETs
    GigaHertz 2012, Stockholm, Sweden, 2012-03-06. (BibTeX) (More info)
  19. E. Lind, J. Wu, L. E. Wernersson:
    High-k oxides on InAs 100 and 111B surfaces
    Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices, 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS), Seattle, WA, Vol. 45, No. 3, pp. 61-67, MAY 06-10, 2012. (BibTeX) (More info)
  20. S. Johansson, S. Gorji Ghalamestani, M. Egard, M. Borg, M. Berg, L. E. Wernersson, E. Lind:
    High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
    physica status solidi (c), 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week, Berlin, Germany, Vol. 9, No. 2, pp. 350-353, May 22-26, 2011. (BibTeX) (More info)
  21. S. Gorji Ghalamestani, S. Johansson, M. Borg, K. Dick, L. E. Wernersson:
    Highly controlled InAs nanowires on Si(111) wafers by MOVPE
    physica status solidi (c), 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week, Berlin, Germany, Vol. 9, No. 2, May 22-26, 2011. (BibTeX) (More info)
  22. 2011

  23. A. Dey, C. Thelander, M. Borgström, M. Borg, E. Lind, L. E. Wernersson:
    15 nm diameter InAs nanowire MOSFETs
    Device Research Conference (DRC), 2011 69th Annual, Santa Barbara, CA, USA, pp. 21-22, 2011-06-20. (BibTeX) (More info)
  24. M. Ärlelid, L. Ohlsson, M. Egard, E. Lind, L. E. Wernersson:
    60 GHz impulse radio measurements
    2011 IEEE International Conference on Ultra-Wideband (ICUWB), Bologna, Italy, pp. 536-540, Sep 14-16, 2011. (BibTeX) (More info)
  25. M. Egard, L. Ohlsson, M. Borg, F. Lenrick, R. Wallenberg, L. E. Wernersson, E. Lind:
    High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
    2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, DEC 05-07, 2011. (BibTeX) (More info)
  26. K. Haneda, F. Tufvesson, S. Wyne, M. Ärlelid, A. Molisch:
    Feasibility study of a mm-wave impulse radio using measured radio channels
    2011 IEEE 73rd Vehicular Technology Conference (VTC Spring), Budapest, Hungary, 2011-05-15/2011-05-18. (BibTeX) (More info)
  27. S. Johansson, S. Gorji Ghalamestani, M. Borg, E. Lind, L. E. Wernersson:
    Temperature and annealing effects on InAs nanowire MOSFETs
    Microelectronic Engineering, 17th International Conference on Insultating Films on Semiconductors, Grenoble, France, Vol. 88, No. 7, pp. 1105-1108, June 21-24, 2011. (BibTeX) (More info)
  28. G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L. E. Wernersson:
    Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
    Microelectronic Engineering, EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials, Strasbourg, France, Vol. 88, No. 4, pp. 444-447, Jun 07-11, 2010. (BibTeX) (More info)
  29. R. Timm, M. Hjort, A. Fian, C. Thelander, E. Lind, J. N. Andersen, L. E. Wernersson, A. Mikkelsen:
    Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
    Microelectronic Engineering, 17th Conference on "Insulating Films on Semiconductors", Grenoble, France, Vol. 88, pp. 1091-1094, 2011 June 21-24. (BibTeX) (More info)
  30. J. Johansson, M. Borg, J. Bolinsson, K. Dick Thelander:
    Compositional grading of axial heterojunctions in metal particle seeded III - V semiconductor nanowires.
    MRS Fall Meeting, Boston, MA, USA, 2011. (BibTeX) (More info)
  31. 2010

  32. A. Dey, M. Hell, C. C. Rolf, P. Stankovski, M. Ågren:
    Laboratory instructions as a cause of student dissonance
    LTHs 6:e Pedagogiska Inspirationskonferens, Lund, Sweden, 2010-12-15. (BibTeX) (More info)
  33. E. Lind, M. Egard, S. Johansson, A. C. Johansson, M. Borg, C. Thelander, K. M. Persson, A. Dey, L. E. Wernersson:
    High Frequency Performance of Vertical InAs Nanowire MOSFET
    2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm), 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, JAPAN, MAY 31-JUN 04, 2010. (BibTeX) (More info)
  34. A. Dey, M. Egard, S. Johansson, A. C. Johansson, K. M. Persson, M. Borg, C. Thelander, P. Nilsson, H. Sjöland, E. Lind, L. E. Wernersson:
    Vertical InAs nanowire wrap gate transistors for integration on a Si platform
    2010 GigaHertz Symposium, Lund, 2010-03-09/2010-03-10. (BibTeX) (More info)
  35. L. Ohlsson, D. Sjöberg, M. Ärlelid, M. Egard, E. Lind, L. E. Wernersson:
    Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
    2010 Loughborough Antennas & Propagation Conference, Loughborough, UK, pp. 253-256, 2010-11-08/2010-11-09. (BibTeX) (More info)
  36. L. E. Wernersson, M. Egard, M. Ärlelid, E. Lind:
    Tunneling-based devices and circuits
    2010 IEEE International Conference on IC Design and Technology (ICICDT), MINATEC, Grenoble, France, pp. 190-193, 2010-06-04. (BibTeX) (More info)
  37. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
    Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
    Device Research Conference (DRC), 2010, Notre Dame, US, pp. 161-162, 2010-06-20. (BibTeX) (More info)
  38. M. Ärlelid, L. E. Wernersson, M. Egard, E. Lind:
    A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
    2010 IEEE International Conference on Ultra-Wideband (ICUWB), Nanjing, China, pp. 102-105, 2010-09-20. (BibTeX) (More info)
  39. E. Lind, L. E. Wernersson, R. Timm, M. Hjort, A. Mikkelsen, Y. M. Niquet:
    High-k oxides on (100), (111)A and (111)B InAs substrates
    EMRS spring meeting, Strasbourg, France, 2010. (BibTeX) (More info)
  40. M. Borg, K. Dick Thelander, P. Caroff, B. Ganjipour, C. Thelander, L. E. Wernersson:
    InAs/GaSb heterostructure nanowires for tunnel FETs
    15th international conference on metal organic vapor phase epitaxy, Lake Tahoe, USA, 2010. (BibTeX) (More info)
  41. G. Astromskas, K. Storm, L. E. Wernersson:
    Analysis of InAs/HfO2 nanowire CV characteristics
    EMRS spring meeting, Strasbourg, France, 2010. (BibTeX) (More info)
  42. 2009

  43. M. Egard, M. Ärlelid, E. Lind, G. Astromskas, L. E. Wernersson:
    20 GHz gated tunnel diode based UWB pulse generator
    Physica Status Solidi C: Current Topics In Solid State Physics, Vol 6, No 6, 35th International Symposium on Compound Semiconductors, Rust, Germany, Vol. 6, No. 6, pp. 1399-1402, Sep 21-24, 2008. (BibTeX) (More info)
  44. M. Egard, M. Ärlelid, E. Lind, P. Caroff, G. Astromskas, M. Borg, L. E. Wernersson:
    60 GHz Wavelet Generator for Impulse Radio Applications
    EUWIT: 2009 European Wireless Technology Conference, European Wireless Technology Conference (EuWiT 2009), Rome, Italy, pp. 234-237, Sep 28-29, 2009. (BibTeX) (More info)
  45. M. Egard, M. Ärlelid, E. Lind, P. Caroff, G. Astromskas, M. Borg, L. E. Wernersson:
    60 GHz Wavelet Generator for Impulse Radio Applications
    European Microwave Conference, 2009. EuMC 2009, 37th European Microwave Conference, Rome, Italy, pp. 1908-1911, September 29-October 01, 2009. (BibTeX) (More info)
  46. M. Ärlelid, L. E. Wernersson, M. Egard, E. Lind:
    60 GHz Ultra-Wideband Impulse Radio Transmitter
    IEEE International Conference on Ultra-Wideband, 2009. ICUWB 2009, 9th IEEE International Conference on Ultra-Wideband, Vancouver, Canada, pp. 185-188, SEP 09-11, 2009. (BibTeX) (More info)
  47. D. Sjöberg, M. Egard, M. Ärlelid, G. P. Vescovi, L. E. Wernersson:
    Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
    European Conference on Antennas and Propagation, Berlin, Germany, pp. 3429-3433, 2009-03-23. (BibTeX) (More info)
  48. M. Borg, M. Messing, P. Caroff, K. Dick Thelander, K. Deppert, L. E. Wernersson:
    MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
    2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM), 21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, United States, pp. 249-252, May 10-14, 2009. (BibTeX) (More info)
  49. D. Wheeler, L. E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K. J. Weststrate, A. Sonnet, E. M. Vogel, A. Seabaugh:
    Deposition of HfO2 on InAs by atomic-layer deposition
    Microelectronic Engineering, 16th Biennial Conference on Insulating Films on Semiconductors, Cambridge, England, Vol. 86, No. 7-9, pp. 1561-1563, Jun 28-Jul 07, 2009. (BibTeX) (More info)
  50. 2008

  51. E. Lind, Z. Griffith, M. J. W. Rodwell:
    Improved breakdown voltages for type I InP/InGaAs DHBTs
    20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, Versailles, France, pp. 504-507, May 25-29, 2008. (BibTeX) (More info)
  52. M. Jeppsson, K. Dick, H. Nilsson, N. Sköld, J. Wagner, P. Caroff, L. E. Wernersson:
    Characterization of GaSb nanowires grown by MOVPE
    Journal of Chrystal Growth, 14th International Conference on Metal Organic Vapor Phase Epitaxy, Metz, FRANCE, Vol. 310, No. 23, pp. 5119-5122, JUN 01-06, 2008. (BibTeX) (More info)
  53. L. E. Wernersson:
    III/V Nanowire FETs for CMOS?
    Sige, Ge, And Related Compounds 3: Materials, Processing, And Devices, 3rd International SiGe, Ge, and Related Compounds Symposium, Honolulu, HI, USA, Vol. 16, No. 10, pp. 741-743, Oct 12-17, 2008. (BibTeX) (More info)
  54. P. Caroff, M. Jeppsson, D. Wheeler, M. Keplinger, B. Mandl, J. Stangl, A. Seabaugh, G. Bauer, L. E. Wernersson:
    InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
    Journal of Physics: Conference Series, 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, Sweden, Vol. 100, pp. 042017-, July 02-06, 2007. (BibTeX) (More info)
  55. G. Astromskas, L. E. Wernersson:
    Heterogeneous integration of InAs on W/GaAs by MOVPE
    Journal of Physics: Conference Series, 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, Sweden, Vol. 100, pp. 042043-, July 02-06, 2007. (BibTeX) (More info)
  56. G. Astromskas, M. Jeppsson, P. Caroff, L. E. Wernersson:
    Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
    20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, Versailles, France, pp. 354-356, May 25-29, 2008. (BibTeX) (More info)
  57. 2007

  58. L. E. Wernersson:
    InAs WRAP-gate nanowire transistors
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, pp. 527-529, May 14-18 2007. (BibTeX) (More info)
  59. L. E. Wernersson:
    High-performance InAs NW MISFETs
    Book of abstracts: 8th Sweden-Japan Intl Workshop on Quantum Nanoelectronics, Lund, Sweden (2007), invited, 2007. (BibTeX) (More info)
  60. L. E. Wernersson:
    Electron microscopy studies of nanowires
    Book of abstracts: Aminoff Symp: Carbon nanotubes - with an eye on the nanoworld, Stockholm, Sweden (2007), invited, 2007. (BibTeX) (More info)
  61. 2006

  62. E. Lind, L. E. Wernersson:
    InAsP/InAs nanowire heterostructure field effect transistors
    Device Research Conference, University Park, PA, USA, pp. 173-174, 26-28 June 2006. (BibTeX) (More info)
  63. L. Fröberg, T. Löwgren, C. Thelander, E. Lind, T. Bryllert, P. Svensson, J. Ohlsson, L. Samuelson, L. E. Wernersson:
    Vertical InAs nanowire wrap-gate FETs
    Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006), 2006. (BibTeX) (More info)
  64. T. Bryllert, L. E. Wernersson, L. Fröberg, L. Samuelson:
    Vertical high mobility wrap-gated InAs nanowire transistors
    IEEE Electron Dev Lett 27, 323-325 (2006), 63rd Annual Device Res Conf, Santa Barbara, Ca, USA (2005), 2006. (BibTeX) (More info)
  65. L. E. Wernersson:
    Nanowire field effect transistor
    Book of abstracts: Intl Conf on Solid State Devices and Materials, Kanagawa, Japan (2006), invited, 2006. (BibTeX) (More info)
  66. L. E. Wernersson:
    Nanowire transistors: fabrication, performance and applications
    Book of abstracts: Intl Workshop Challenges and Opportunities in Nanoarchitectures, Halmstad, Sweden (2006), invited, 2006. (BibTeX) (More info)
  67. L. E. Wernersson:
    InAs wrap-gate FETs
    Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006), 2006. (BibTeX) (More info)
  68. 2005

  69. L. E. Wernersson, T. Bryllert, E. Lind, L. Samuelson:
    Wrap-gated InAs nanowire field-effect transistor
    International Electron Devices Meeting 2005, Washington, DC, USA, pp. 273-276, 5-7 Dec. 2005. (BibTeX) (More info)
  70. L. E. Wernersson, E. Lind, W. Seifert:
    MOVPE of InAs epitaxial overgrowth of W masks
    Book of abstracts: 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005), 2005. (BibTeX) (More info)
  71. L. E. Wernersson, T. Bryllert, E. Lind, L. Samuelson:
    Wrap-gated InAs nanowire field effect transistor
    Technical digest: IEEE Intl Electron Dev Meet 273-276 (2005), IEEE Intl Electron Dev Meet, Washington, DC (2005), invited, 2005. (BibTeX) (More info)
  72. T. Bryllert, L. Samuelson, L. Jensen, L. E. Wernersson:
    Vertical high mobility wrap-gated InAs nanowire transistor
    Device Research Conference, Santa Barbara, CA, USA, 20-22 June 2005. (BibTeX) (More info)
  73. L. E. Wernersson:
    Gated tunnel diodes in nanoelectronic pulse generators
    Book of abstracts: Sweden-Japan Intl Workshop on Quantum Nano-Physics and Electronics, Kyoto, Japan (2005), 2005. (BibTeX) (More info)
  74. 2004

  75. P. Lindström, E. Lind, L. E. Wernersson:
    Design of resonant tunneling permeable base transistors
    2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767), San Diego, CA, USA, pp. 158-163, 25-27 Aug. 2003. (BibTeX) (More info)
  76. E. Lind, P. Lindström, A. Nauen, L. E. Wernersson:
    Resonant tunneling permeable base transistor based pulsed oscillator
    Device Research Conference - Conference Digest, DRC, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, pp. 129-130, Jun 21-23 2004. (BibTeX) (More info)
  77. E. Lind, P. Lindström, A. Nauen, L. E. Wernersson:
    Resonant tunneling permeable base transistor based pulsed oscillator
    Book of abstracts: Intl Semicond Dev Res Symp, (2004), 2004. (BibTeX) (More info)
  78. L. E. Wernersson:
    3D metal-semiconductor devices and other nanoelectronic devices
    NSF/SSF Workshop on Nanoscience and Nanotechnology, Lund, Sweden (2004), 2004. (BibTeX) (More info)
  79. L. E. Wernersson:
    Nanoelectronic pulse generators for UWB applications
    Book of abstracts:, 1st Sweden-Korea Nano-Workshop, Seoul, Korea (2004), invvited, 2004. (BibTeX) (More info)
  80. 2003

  81. E. Lind, P. Lindström, L. E. Wernersson:
    Resonant Tunneling Permeable Base Transistor for RF applications
    2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741), Washington, DC, USA, pp. 487-488, 10-12 Dec. 2003. (BibTeX) (More info)
  82. 2002

  83. E. Lind, P. Lindström, I. Pietzonka, W. Seifert, L. E. Wernersson:
    Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
    Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 24-28 June 2002. (BibTeX) (More info)
  84. E. Lind, P. Lindström, I. Pietzonka, W. Seifert, L. E. Wernersson:
    A resonant tunneling permeable base transistor with Al-free tunneling barriers
    Device Research Conference (Cat. No.02TH8606), Santa Barbara, CA, USA, pp. 155-156, 24-26 June 2002. (BibTeX) (More info)
  85. L. E. Wernersson, E. Lind, P. Lindström, P. Andreani:
    Circuits and devices with integrated VFETs and RTDs
    2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353), Phoenix-Scottsdale, AZ, USA, pp. 205-208, 26-29 May 2002. (BibTeX) (More info)
  86. M. Suhara, S. Ooki, L. E. Wernersson, W. Seifert, L. Samuelson, T. Okumura:
    A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
    Compound Semiconductors 2001 (Institute of Physics Conference Series), ISCS 2001, Tokyo, Japan, No. 170, pp. 363-367, October 1-4, 2001. (BibTeX) (More info)
  87. M. Borgström, T. Bryllert, T. Sass, L. E. Wernersson, L. Samuelson, W. Seifert:
    Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
    Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 24-28 June 2002. (BibTeX) (More info)
  88. T. Bryllert, M. Borgström, T. Sass, B. Gustafson, L. Landin, L. E. Wernersson, W. Seifert, L. Samuelson:
    Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
    Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 24-28 June 2002. (BibTeX) (More info)

Conference Papers

  1. A. Dey, M. Berg, M. Borg, S. Gorji Ghalamestani, K. Jansson, S. Johansson, E. Lind, K. M. Persson, C. Thelander, M. Ärlelid, P. Nilsson, L. E. Wernersson:
    Inverter circuits based on vertical InAs nanowire MOSFETs
    SSoCC 2011, Varberg, Sweden, 2011-05-02. (BibTeX) (More info)
  2. M. Ärlelid, E. Lind, M. Nilsson, L. E. Wernersson:
    Pulse Generator with Gated Tunnel Diode
    Proceedings of Swedish System-on-Chip Conference (SSoCC), Fiskebäckskil, 2007-05-14/2007-05-15. (BibTeX) (More info)

Conference Abstracts

  1. D. Sjöberg, L. Ohlsson, I. Vakili, M. Gustafsson, L. E. Wernersson:
    Impulse Based Radio Technology for Mm-Waves
    9th European Conference on Antennas and Propagation (EuCAP), Lisbon, pp. 1-2, 2015-04-13. (BibTeX) (More info)
  2. I. Vakili, L. Ohlsson, M. Gustafsson, L. E. Wernersson:
    Wideband Extraction of Material Parameters in the Mm-Wave Regime
    Antenn/EMB, Gothenburg, pp. 1-1, 2014-03-11/2014-03-12. (BibTeX) (More info)
  3. I. Vakili, L. Ohlsson, M. Gustafsson, L. E. Wernersson:
    Time Domain Material Characterizations Using Leaky Lens Antennas
    URSI General Assembly and Scientific Symposium, Beijing, China, pp. 1-1, 2014-08-16/2014-08-23. (BibTeX) (More info)
  4. I. Vakili, L. Ohlsson, L. E. Wernersson, M. Gustafsson:
    Complex Permittivity Extraction Using a Leaky-Lens Antenna System
    Progress in Electromagnetics Research Symposium (PIERS), Guangzhou, China, 2014-08-25. (BibTeX) (More info)
  5. A. Dey, J. Svensson, M. Borg, M. Ek, E. Lind, L. E. Wernersson:
    GaSb nanowire pFETs for III-V CMOS
    71th Annual Device Research Conference (DRC), Notre Dame, USA, pp. 13-14, 2013-06-24. (BibTeX) (More info)
  6. M. Ek, M. Borg, J. Svensson, J. Johansson, K. Dick:
    Exploring the diameter limitation in III-Sb heterostructure growth
    7th Nanowire growth workshop, Lausanne, Switzerland, 2013-06-10. (BibTeX) (More info)
  7. M. Borg, M. Ek, B. Ganjipour, A. Dey, K. Dick Thelander, L. E. Wernersson, C. Thelander:
    Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
    MRS Fall Meeting 2012, Boston, MA, 2012-11-25. (BibTeX) (More info)
  8. M. Borg, A. Dey, B. Ganjipour, M. Ek, K. Dick Thelander, C. Thelander, L. E. Wernersson:
    Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
    ICPS 2012, Zürich, 2012. (BibTeX) (More info)
  9. K. M. Persson, S. Johansson, M. Berg, A. Dey, K. Jansson, M. Borg, J. Svensson, C. Thelander, H. Sjöland, L. E. Wernersson, E. Lind:
    InAs Nanowires for High Frequency Electronics
    GigaHertz 2012, Stockholm, 2012-03-06/2012-03-07. (BibTeX) (More info)
  10. K. M. Persson, M. Berg, M. Borg, J. Wu, H. Sjöland, E. Lind, L. E. Wernersson:
    Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
    Device Research Conference (DRC), 2012 70th Annual, University Park, PA, USA, pp. 195-196, 2012-06-18. (BibTeX) (More info)
  11. A. Bondarik, C. Gustafson, L. Ohlsson, D. Sjöberg:
    PTFE and Quartz Based 60 GHz Patch Antennas
    Antenn/EMB, Stockholm, 2012-03-08. (BibTeX) (More info)
  12. B. Ganjipour, M. Borg, M. Ek, K. Dick Thelander, M. E. Pistol, L. E. Wernersson, C. Thelander:
    Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
    ICPS 2012, Zürich, 2012. (BibTeX) (More info)
  13. K. Dick Thelander, J. Bolinsson, M. Ek, M. Borg, S. Fahlvik Svensson, J. Johansson:
    Heterointerface Control in III-V Semiconductor Nanowires
    MRS Fall Meeting 2012, Boston, MA, 2012-11-25. (BibTeX) (More info)
  14. E. Lind, M. Egard, S. Johansson, M. Borg, C. Thelander, K. M. Persson, A. Dey, L. E. Wernersson:
    High Frequency Performance of Vertical InAs Nanowire MOSFET
    22nd International Conference On Indium Phosphide And Related Materials (IPRM), Kagawa, Japan, 2010. (BibTeX) (More info)
  15. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
    60 GHz Wavelet Generator for Impulse Radio Applications
    GigaHertz Symposium 2010, Lund, Sweden, pp. 52-52, 2010-03-09. (BibTeX) (More info)
  16. M. Ärlelid, M. Egard, E. Lind, L. E. Wernersson:
    Oscillator for 60 GHz Super Regenerative Receiver
    GigaHertz Symposium 2010, Lund, Sweden, pp. 51-51, 2010-03-09. (BibTeX) (More info)
  17. M. Egard, M. Ärlelid, E. Lind, L. E. Wernersson:
    A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
    34th International European Workshop on Compound Semiconductor Devices and Integrated Circuits, Darmstadt/Seeheim, Germany, 2010-05-17. (BibTeX) (More info)
  18. K. M. Persson, A. Dey, E. Lind, C. Thelander, H. Sjöland, L. E. Wernersson:
    Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
    Swedish System-on-Chip Conference, SSoCC '09, Lund, Sweden, 2009-05-04/2009-05-05. (BibTeX) (More info)
  19. M. Nilsson, M. Ärlelid, E. Lind, G. Astromskas, L. E. Wernersson:
    Gated tunnel diode pulse generator
    Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology, GigaHertz Symposium, Göteborg, Sweden, No. nrMC2-125, pp. 37-37, 2008-03-05. (BibTeX) (More info)
  20. M. Ärlelid, M. Nilsson, G. Astromskas, E. Lind, L. E. Wernersson:
    High Tuning-Range VCO Using a Gated Tunnel Diode
    2007 International Conference on Solid State Materials and Devices, Tsukuba, Japan, pp. 798-799, 2007-09-18/2007-09-21. (BibTeX) (More info)

Dissertations

  1. J. Wu:
    Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
    Lund University Ph.D. thesis, ISBN 978-91-7623-681-9, Department of Electrical and Information Technology, Lund University, 2016. (BibTeX) (More info)
  2. K. Jansson:
    InAs Nanowire Devices and Circuits
    Series of licentiate and doctoral theses, Vol. 2015, ISSN 1654-790X, Electrical and Information Technology, Lund University, 2015. (BibTeX) (More info)
  3. L. Ohlsson:
    Compact and Efficient Millimetre-Wave Circuits for Wideband Applications
    Series of licentiate and doctoral theses, ISSN 1654-790X; No. 71, 2015. (BibTeX) (More info)
  4. M. Berg:
    Vertical InAs Nanowire Devices and RF Circuits
    Series of licentiate and doctoral theses, Vol. 73, ISSN 1654-790X, Lund University, 2015. (BibTeX) (More info)
  5. K. M. Persson:
    Nanowire Transistors and RF Circuits for Low-Power Applications
    ISSN 1654-790X, Lund University, 2014. (BibTeX) (More info)
  6. S. Johansson:
    Vertical Nanowire High-Frequency Transistors
    ISSN 1654-790X, No. 61, 2014. (BibTeX) (More info)
  7. A. Dey:
    Low-Power Nanowire Circuits and Transistors
    ISSN 1654-790X, 2013. (BibTeX) (More info)
  8. M. Ärlelid:
    Millimeter-Wave Impulse Radio
    ISBN 978-91-7473-330-3, 2012. (BibTeX) (More info)
  9. M. Borg:
    Antimonide Heterostructure Nanowires - Growth, Physics and Devices
    ISBN 978-91-7473-227-6, 2012. (BibTeX) (More info)
  10. E. Lind:
    Tunneling Based Electronic Devices
    ISBN 91-628-6226-X, Solid State Physics, Lund University, 2004. (BibTeX) (More info)
  11. L. E. Wernersson:
    Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
    ISBN 91-628-3002-3, Lars-Erik Wernersson Norbergsg. 3 223 54 Lund,, 1998. (BibTeX) (More info)

Popular Science Papers

  1. G. Roll, E. Lind, M. Egard, S. Johansson, L. Ohlsson, L. E. Wernersson:
    RF and DC Analysis of Stressed InGaAs MOSFETs
    IEEE Electron Device Letters, Vol. 35, No. 2, pp. 181-183, 2014. (BibTeX) (More info)